MMRF1317H_1030-1090 MHz, 1300 W Peak, 50 V

These 1300 W RF power transistors, MMRF1317H and MMRF1317HS, are designed for applications operating at frequencies between 1020 and 1100 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and secondary surveillance radars.

产品详情

RF Performance Tables

Typical Performance

In 1030, 1090 MHz reference circuit, V_DD = 50 Vdc, I_DQ(A+B) = 100 mA

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
1030⁽¹⁾	Pulse (128 µsec, 10% Duty Cycle)	1300 Peak	18.9	56.0
1090⁽¹⁾	Pulse (128 µsec, 10% Duty Cycle)	1100 Peak	18.8	57.9

Typical Narrowband Performance

V_DD = 50 Vdc, I_DQ(A+B) = 100 mA

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
1030⁽²⁾	Pulse (128 µsec, 10% Duty Cycle)	1300 Peak	18.2	58.1

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
1030⁽²⁾	Pulse (128 µsec, 10% Duty Cycle)	> 10:1 at all Phase Angles	40 (3 dB Overdrive)	50	No Device Degradation

1. Measured in 1030, 1090 MHz reference circuit.
2. Measured in 1030 MHz narrowband test circuit.

文档

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1-5 / 6 文件

数据手册
MMRF1317H 1030-1090 MHz, 1300 W Peak, 50 V Data Sheet

PDF版本 0Mar 25, 2016866.6 KBMMRF1317HEnglish
应用笔记
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDF版本 2Jul 11, 2024235.5 KBAN1955English
应用笔记
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

PDF版本 1Feb 24, 2011664.6 KBAN1908English
封装信息
98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins

PDF版本 HOct 25, 2019159.0 KBSOT1787-1English
封装信息
98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins

PDF版本 HFeb 23, 201644.6 KBSOT1829-1English
支持信息
RF Military High Power Avionics Devices

PDF版本 0Mar 25, 2016726.5 KBMILITARY_HIGH_POWER_RADAR_TRN_SIEnglish

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设计资源

设计文件

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5 设计文件

收到完整的详细信息。 请参阅产品足迹及更多信息电子CAD文件.

模型
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTML版本 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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模型
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTML版本 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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模型
MMRF1317H RF High-Power Model ADS Product Model Design Kit

ZIP版本 1Jun 17, 2019 00:00:00202.3 KBMMRF1317H_MDL_ADS

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模型
MMRF1317H RF High-Power Model AWR Product Model Design Kit

ZIP版本 0Mar 25, 2016 00:00:00581.7 KBMMRF1317H_MDL_AWR

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印刷电路板与电路图
MMRF1317H 1030-1090 MHz Reference Circuit Design Files

ZIP版本 0Sep 20, 2019 00:00:005.3 MBMMRF1317H-1030-1090-MHz-Reference-Circuit

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1030-1090 MHz, 1300 W Peak, 50 V RF Power LDMOS Transistors

产品详情

RF Performance Tables

Typical Performance

Typical Narrowband Performance

Load Mismatch/Ruggedness

文档

过滤方式

MMRF1317H 1030-1090 MHz, 1300 W Peak, 50 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins

98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins

RF Military High Power Avionics Devices

设计资源

设计文件

过滤方式

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MMRF1317H RF High-Power Model ADS Product Model Design Kit

MMRF1317H RF High-Power Model AWR Product Model Design Kit

MMRF1317H 1030-1090 MHz Reference Circuit Design Files

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