设计文件
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1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor
This high ruggedness device, MMRF1316NR1, is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an unmatched input and output design allowing wide frequency range utilization, between 1.8 and 600 MHz.
RF_ISO_TO_270WB_4 graphic image
产品详情
重要参数
-
- Frequency (Min) (MHz)
- 1.8
-
- Frequency (Max) (MHz)
- 600
-
- Supply Voltage (Typ) (V)
- 50
-
- P1dB (Typ) (dBm)
- 54.8
-
- P1dB (Typ) (W)
- 300
-
- Die Technology
- LDMOS
RF Performance Tables
87.5-108 MHz Broadband
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 87.5-108(1,3) | CW | 361 | 23.8 | 80.1 |
230 MHz Narrowband
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 230(2) | CW | 300 | 25.0 | 70.0 |
| 230(2) | Pulse (100 µsec, 20% Duty Cycle) | 300 Peak | 27.0 | 71.0 |
Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 98(1) | CW | > 65:1 at all Phase Angles | 3 (3 dB Overdrive) | 50 | No Device Degradation |
| 230(2) | Pulse (100 µsec, 20% Duty Cycle) | 1.16 Peak (3 dB Overdrive) |
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.
