设计文件
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1-2000 MHz, 4 W, 28 V Class A/AB RF Power MOSFET
产品详情
特征
- Typical Two-Tone Performance @ 1960 MHz, 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP
- Power Gain: 18 dB
- Drain Efficiency: 33%
- IMD: –34 dBc
- Typical Two-Tone Performance @ 900 MHz, 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP
- Power Gain: 19 dB
- Drain Efficiency: 33%
- IMD: –39 dBc
- Capable of Handling 5:1 VSWR @ 28 Vdc, 1960 MHz, 4 W CW Output Power
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- On-Chip RF Feedback for Broadband Stability
- Integrated ESD Protection
- RoHS Compliant
- In Tape and Reel. T1 Suffix = 1,000 Units,16 mm Tape Width, 7-inch Reel.
重要参数
-
- Frequency (Min) (MHz)
- 1
-
- Frequency (Max) (MHz)
- 2000
-
- Supply Voltage (Typ) (V)
- 28
-
- P1dB (Typ) (dBm)
- 36
-
- P1dB (Typ) (W)
- 4
-
- Die Technology
- LDMOS
