设计文件
收到完整的详细信息。 请参阅产品足迹及更多信息 电子CAD文件.
1030-1090 MHz, 250 W Peak, 50 V RF LDMOS Integrated Power Amplifiers
产品详情
重要参数
-
- Frequency (Min) (MHz)
- 1030
-
- Frequency (Max) (MHz)
- 1090
-
- Supply Voltage (Typ) (V)
- 50
-
- P1dB (Typ) (dBm)
- 54
-
- P1dB (Typ) (W)
- 250
-
- Die Technology
- LDMOS
RF Performance Tables
Narrowband Performance
(50 Vdc, TA = 25°C)| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
2nd Stage Eff. (%) |
| 1090(1) | Pulse (128 µsec, 10% Duty Cycle) | 250 Peak | 32.1 | 61.4 |
Typical Wideband Performance
(50 Vdc, TA = 25°C)| Frequency (MHz)(2) |
Signal Type | Pout (W) |
Gps (dB) |
2nd Stage Eff. (%) |
| 1030 | Pulse (128 µsec, 10% Duty Cycle) | 250 Peak | 32.5 | 59.1 |
| 1090 | 30.1 | 60.6 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage | Result |
| 1090(1) | Pulse (128 µsec, 10% Duty Cycle) | > 10:1 at all Phase Angles | 0.345 W Peak (3 dB Overdrive) | 50 | No Device Degradation |
2. Measured in 1030-1090 MHz reference circuit.
