A2T07D160W04S 产品信息|NXP

A2T07D160W04S

不推荐用于新设计

A2T07D160W04S

不推荐用于新设计

购买选项

工作特点

参数
fi(RF) [max] (MHz)
960
Number of pins
4
Package Style
CFM
Amp Class
AB, C
Test Signal
WCDMA
Supply Voltage (Typ) (V)
28
Class
AB, C
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.63
P1dB (Typ) (dBm)
49
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
716, 960
Efficiency (Typ) (%)
48.5
Peak Power (Typ) (W)
186
Frequency Band (Hz)
716000000, 960000000
参数
Description
Airfast RF Power LDMOS Transistor, 710-960 MHz, 160 W Avg., 28 V
fi(RF) [min] (MHz)
716
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
30 @ AVG
P1dB (Typ) (W)
79
Gain (Typ) (dB)
21.5
Power Gain (Typ) (dB) @ f (MHz)
21.5 @ 803
Frequency (Max) (MHz)
960
Frequency (Min) (MHz)
716
Frequency (Min-Max) (GHz)
0.716 to 0.96000004
frange [max] (MHz)
960
frange [min] (MHz)
716
Rth(j-a) (K/W)
0.63
Matching
input and output impedance matching
Modes of Operation
wideband code division multiple access
Peak Power (Typ) (dBm)
52.7

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
A2T07D160W04SR3(935315451128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
3086.1

质量

部件/12NC安全保障功能安全封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接
A2T07D160W04SR3
(935315451128)
No
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
A2T07D160W04SR3
(935315451128)
854233
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
A2T07D160W04SR3
(935315451128)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

更多信息 A2T07D160W04S

The A2T07D160W04SR3 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz.