MMRF1310HS 产品信息|NXP

安全互联汽车

工业

消费电子

技术

MMRF1310HS

使用寿命终止

MMRF1310HS

使用寿命终止

特点

Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V

  • 数据手册:
  • PDF

封装

CFM4F: CFM4F, ceramic, flange mount flat package; 4 terminals; 9.78 mm x 20.53 mm x 3.75 mm body

购买选项

工作特点

参数值
Frequency (Min) (MHz)
1.8
Frequency (Max) (MHz)
600
Supply Voltage (Typ) (V)
50
参数值
P1dB (Typ) (dBm)
54.8
P1dB (Typ) (W)
300
Die Technology
LDMOS

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量（mg）
MMRF1310HSR5(935320331178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
4570.3

质量

部件/12NC安全保障功能安全封装体峰值温度（PPT）（C°）Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接
MMRF1310HSR5
(935320331178)
No
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
MMRF1310HSR5
(935320331178)
854129
EAR99

更多信息 MMRF1310H

The MMRF1310HR5 and MMRF1310HSR5 are high ruggedness devices, designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization between 1.8 and 600 MHz.