MMRF1050H 产品信息|NXP

MMRF1050H

正常供应

MMRF1050H

正常供应

特点


Airfast RF Power LDMOS Transistor, 1050 W Peak over 850-950 MHz, 50 V

封装


CFM4F: CFM4F, ceramic, flange mount flat package; 4 terminals; 13.72 mm pitch, 10.16 mm x 41.15 mm x 4.575 mm body

购买选项

工作特点

参数
Frequency (Min) (MHz)
850
Frequency (Max) (MHz)
950
Supply Voltage (Typ) (V)
50
参数
P1dB (Typ) (dBm)
60.2
P1dB (Typ) (W)
1050
Die Technology
LDMOS

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标REACH SVHC重量(mg)
MMRF1050HR6(935411826128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
13192.6

质量

部件/12NC安全保障功能安全封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接
MMRF1050HR6
(935411826128)
No
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
MMRF1050HR6
(935411826128)
854233
EAR99

更多信息 MMRF1050H

This MMRF1050H RF power transistor is designed for short pulse applications operating at frequencies from 850 to 950 MHz.