AFT31150N 产品信息|NXP

AFT31150N

不推荐用于新设计

AFT31150N

不推荐用于新设计

特点


Airfast RF Power LDMOS Transistor, 150 W Pulse over 2700-3100 MHz, 32 V

封装


FM2F: FM2F, plastic, flange mount package; 2 terminals; 9.96 mm x 20.57 mm x 3.81 mm body

购买选项

AFT31150NR5

不推荐用于新设计

12NC: 935346512578

详细信息

订购

从分销商处购买

工作特点

参数
Frequency (Min) (MHz)
2700
Frequency (Max) (MHz)
3100
Supply Voltage (Typ) (V)
32
参数
P1dB (Typ) (dBm)
51.8
P1dB (Typ) (W)
150
Die Technology
LDMOS

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
AFT31150NR5(935346512578)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
3081.1

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接无铅焊接
AFT31150NR5
(935346512578)
No
3
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
AFT31150NR5
(935346512578)
854233
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
AFT31150NR5
(935346512578)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label
AFT31150NR5
(935346512578)
2017-12-202018-01-03201710023INew PQ Label Input for Non-MPQ Shipments

更多信息 AFT31150N

The AFT31150N RF power transistor is designed for applications operating at frequencies between 2700 and 3100 MHz. This device is suitable for use in pulse applications.