封装信息 (2)
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NI-780S-4L[98ASA10718D]
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98ASA10793D, NI-780H-4L[SOT1827-1]
收到完整的详细信息。 请参阅 eCad 文件中的产品足迹等。
1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors
- 建议不要在新设计中使用本页介绍的产品。
MMRF1305HR5 and MMRF1305HSR5 are RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio communications
and radar. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.
NI-780H-4L, NI-780S-4L Package Image
产品详情
Features
- Wide Operating Frequency Range
- Very Rugged
- Unmatched, Capable of Very Broadband Operation
- Integrated Stability Enhancements
- Low Thermal Resistance
- Integrated ESD Protection Circuitry
- RoHS Compliant
- In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
RF Performance Tables
30-512 MHz Broadband
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
IMD (dBc) |
| 30 to 512 | Two-Tone (100 kHz spacing) | 100 PEP | 19.0 | 30.0 | –30 |
512 MHz Narrowband
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 512 | CW | 100 | 27.2 | 70.0 |
| 512 | Pulse (200 µsec, 20% Duty Cycle) | 100 Peak | 26.0 | 70.0 |
Ruggedness, 512 MHz
| Frequency (MHz) |
Signal Type | VSWR | Pout (W) |
Test Voltage |
Result |
| 512 | Pulse (100 µsec, 20% Duty Cycle) | >65:1 at all Phase Angles | 130 (3 dB Overdrive) | 50 | No Device Degradation |
| 512 | CW | 126 (3 dB Overdrive) |
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设计资源
支持
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