MMRF2010N_1030-1090 MHz, 250 W Peak, 50 V | NXP 半导体

1030-1090 MHz, 250 W Peak, 50 V RF LDMOS Integrated Power Amplifiers

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RF Performance Tables

Narrowband Performance

(50 Vdc, TA = 25°C)
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
2nd Stage Eff.
(%)
1090(1)Pulse
(128 µsec, 10% Duty Cycle)
250 Peak32.161.4

Typical Wideband Performance

(50 Vdc, TA = 25°C)
Frequency
(MHz)(2)
Signal Type Pout
(W)
Gps
(dB)
2nd Stage Eff.
(%)
1030Pulse
(128 µsec, 10% Duty Cycle)
250 Peak32.559.1
109030.160.6

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test Voltage Result
1090(1)Pulse
(128 µsec, 10% Duty Cycle)
> 10:1 at all Phase Angles 0.345 W Peak
(3 dB Overdrive)
50No Device Degradation
1. Measured in 1090 MHz narrowband test circuit.
2. Measured in 1030-1090 MHz reference circuit.

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