A5G35H110N 产品信息|NXP

A5G35H110N

正常供应

A5G35H110N

正常供应

购买选项

工作特点

参数
Frequency (Min) (MHz)
3300
Frequency (Max) (MHz)
3700
Supply Voltage (Typ) (V)
48
参数
Peak Power (Typ) (dBm)
49.4
Peak Power (Typ) (W)
87
Die Technology
GaN

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标REACH SVHC重量(mg)
A5G35H110NT4(935424245528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
500.0

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接无铅焊接
A5G35H110NT4
(935424245528)
No
3
260
40

配送

部件/12NC协调关税 (美国)免责声明
A5G35H110NT4
(935424245528)
854233

更多信息 A5G35H110N

This 15.1 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700 MHz.

This part is characterized and performance is guaranteed for applications operating in the 3300 to 3700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.