A5M37SG239_Airfast功放模块 | NXP 半导体

3450-3980MHz,35dB,平均值8W Airfast®功率放大器模块(带自动偏置控制功能)

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特性

  • 2级模块解决方案,包括作为驱动器的LDMOS集成电路和GaN末级放大器
  • 先进的高性能内部封装Doherty
  • 完全匹配(50Ω输入/输出,直流阻塞)
  • 适用于复杂度较低的数字线性化系统
  • 减少存储效应,提高线性化误差向量幅度
  • 上电时自动偏置
  • 温度感测
  • 数字接口(I2C或SPI)
  • 用于设置偏置条件的嵌入式寄存器和DAC
  • Tx Enable控制引脚用于TDD操作

射频性能表

3450–3980MHz

典型LTE性能:Pout=8W(平均值),VDC1=VDP1=5Vdc,VDC2=VDP2=48Vdc,1×20MHz LTE,输入信号PAR=8dB@0.01% CCDF。(1)

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N true 0 PSPA5M37SG239zh 2 应用笔记 Application Note t789 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 1 Y English https://docs.nxp.com/bundle/A5M37SG239/page/topics/general_description.html A5M37SG239 3450-3980 MHz, 35 dB, 8 W Avg Airfast® power amplifier module with autobias control designed for wireless infrastructure applications. 1728019928503725565311 PSP 1.3 MB None None documents None 1728019928503725565311 /docs/en/data-sheet/A5M37SG239.pdf 1283649 /docs/en/data-sheet/A5M37SG239.pdf A5M37SG239 documents N N Y 2024-10-03 A5M37SG239 3450-3980 MHz, 35 dB, 8 W Avg Data Sheet https://docs.nxp.com/bundle/A5M37SG239/page/topics/general_description.html /docs/en/data-sheet/A5M37SG239.pdf Data Sheet N 980000996212993340 /bundle/A5M37SG239/page/topics/general_description.html /docs/en/data-sheet/A5M37SG239.pdf 2024-12-30 1.3 MB pdf N en Sep 30, 2024 980000996212993340 Data Sheet Y N A5M37SG239 3450-3980 MHz, 35 dB, 8 W Avg Data Sheet 应用笔记 Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note false 0 A5M37SG239 downloads zh-Hans true 1 Y PSP 应用笔记 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 数据手册 1 https://docs.nxp.com/bundle/A5M37SG239/page/topics/general_description.html /docs/en/data-sheet/A5M37SG239.pdf 2024-10-03 /bundle/A5M37SG239/page/topics/general_description.html 1728019928503725565311 PSP 1 Sep 30, 2024 Data Sheet A5M37SG239 3450-3980 MHz, 35 dB, 8 W Avg Airfast® power amplifier module with autobias control designed for wireless infrastructure applications. None /docs/en/data-sheet/A5M37SG239.pdf Y English documents 1283649 Y None 980000996212993340 2024-12-30 N https://docs.nxp.com/bundle/A5M37SG239/page/topics/general_description.html A5M37SG239 3450-3980 MHz, 35 dB, 8 W Avg Data Sheet /docs/en/data-sheet/A5M37SG239.pdf documents 980000996212993340 Data Sheet N en None Y /docs/en/data-sheet/A5M37SG239.pdf 1.3 MB pdf 1 N N A5M37SG239 3450-3980 MHz, 35 dB, 8 W Avg Data Sheet 1.3 MB A5M37SG239 N 1728019928503725565311 true Y Products

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