A6G35S006N_2496–5000MHz，28dBm平均值，48V | NXP 半导体

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A6G35S006N 2496–5000MHz，28dBm平均值，48V Airfast® GaN射频功率晶体管

A6G35S006N
正常供应

滚动图片以放大

A6G35S006N是平均射频功率为28dBm、峰值功率为10W的GaN晶体管，用于移动通信基站应用，覆盖频率范围为2496至5000MHz。

产品详情

特性

  • 高终端阻抗，支持出色的宽带性能
  • 适用于复杂度较低的线性化系统
  • 通用宽带驱动器
  • 优化用于5G基站mMIMO有源天线系统

射频性能表

3500MHz

典型单载波W-CDMA参考电路性能：VDD=48Vdc，IDQ=18mA，Pout=28dBm平均值，输入信号PAR=9.9dB @0.01% CCDF。(1)

频率 Gps
(dB) 		ηD
(%) 		输出PAR
(dB) 		ACPR
(dBc)
3300MHz 21.1 18.5 9.9 -39.5
3400MHz 21.1 19.0 9.8 -39.5
3500MHz 21.0 19.7 9.7 -39.6
3600MHz 20.6 20.2 9.6 -40.1
3670MHz 20.4 20.7 9.5 -39.7

1. 所有数据均使用焊接在恩智浦参考电路中的设备测量得出。

3900MHz

典型单载波W-CDMA性能：VDD=48Vdc，IDQ=18mA，Pout=28dBm平均值，输入信号PAR=9.9dB @0.01% CCDF。(1)

频率 Gps
(dB) 		ηD
(%) 		输出PAR
(dB) 		ACPR
(dBc)
3670MHz 19.7 18.5 9.8 -43.1
3700MHz 20.2 18.8 9.8 -42.8
3800MHz 20.8 19.4 9.6 -44.0
3900MHz 20.6 19.9 9.5 -44.3
4000MHz 20.2 20.7 9.4 -44.2
4100MHz 20.0 21.7 9.3 -44.8

1. 所有数据均使用焊接在电路中的设备测量得出。

4900MHz

典型单载波W-CDMA性能：VDD=48 Vdc，IDQ=19mA，Pout=28dBm平均值，输入信号PAR=9.9dB @0.01% CCDF。(1)

频率 Gps
(dB) 		ηD
(%) 		输出PAR
(dB) 		ACPR
(dBc)
4800MHz 17.5 17.2 9.3 -44.2
4900MHz 18.0 17.5 8.7 -46.2
5000MHz 17.7 17.3 8.6 -48.3

1. 所有数据均使用焊接在电路中的设备测量得出。

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N true 0 PSPA6G35S006Nzh 4 应用笔记 Application Note t789 2 数据手册 Data Sheet t520 1 简介 Fact Sheet t523 1 zh zh zh 数据手册 Data Sheet 1 1 2 English A6G35S006N 2496–5000 MHz, 28 dBm Avg., 48 V Airfast® RF power GaN transistor for cellular base stations 1736879806237725498448 PSP 440.6 KB None None documents None 1736879806237725498448 /docs/en/data-sheet/A6G35S006N.pdf 440580 /docs/en/data-sheet/A6G35S006N.pdf A6G35S006N documents N N 2025-01-14 A6G35S006N 2496–5000 MHz, 28 dBm Avg, 48 V Data Sheet /docs/en/data-sheet/A6G35S006N.pdf /docs/en/data-sheet/A6G35S006N.pdf Data Sheet N 980000996212993340 2025-02-18 pdf N en Jan 13, 2025 980000996212993340 Data Sheet Y N A6G35S006N 2496–5000 MHz, 28 dBm Avg, 48 V Data Sheet 应用笔记 Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 简介 Fact Sheet 1 4 1 English NXP’s extensive portfolio of RF power solutions for active antenna systems (AAS) includes GaN discrete mMIMO solutions for 64T64R and 32T32R solutions. 1648159440615726957303 PSP 1.2 MB None None documents None 1648159440615726957303 /docs/en/fact-sheet/DMS5G3264FS.pdf 1174719 /docs/en/fact-sheet/DMS5G3264FS.pdf DMS5G3264FS documents N N 2022-03-24 GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet /docs/en/fact-sheet/DMS5G3264FS.pdf /docs/en/fact-sheet/DMS5G3264FS.pdf Fact Sheet N 736675474163315314 2025-01-28 pdf N en Dec 3, 2024 736675474163315314 Fact Sheet Y N GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet false 0 A6G35S006N downloads zh-Hans true 1 Y PSP 应用笔记 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 数据手册 1 /docs/en/data-sheet/A6G35S006N.pdf 2025-01-14 1736879806237725498448 PSP 1 Jan 13, 2025 Data Sheet A6G35S006N 2496–5000 MHz, 28 dBm Avg., 48 V Airfast® RF power GaN transistor for cellular base stations None /docs/en/data-sheet/A6G35S006N.pdf English documents 440580 None 980000996212993340 2025-02-18 N /docs/en/data-sheet/A6G35S006N.pdf A6G35S006N 2496–5000 MHz, 28 dBm Avg, 48 V Data Sheet /docs/en/data-sheet/A6G35S006N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N A6G35S006N 2496–5000 MHz, 28 dBm Avg, 48 V Data Sheet 440.6 KB A6G35S006N N 1736879806237725498448 简介 1 /docs/en/fact-sheet/DMS5G3264FS.pdf 2022-03-24 1648159440615726957303 PSP 4 Dec 3, 2024 Fact Sheet NXP’s extensive portfolio of RF power solutions for active antenna systems (AAS) includes GaN discrete mMIMO solutions for 64T64R and 32T32R solutions. None /docs/en/fact-sheet/DMS5G3264FS.pdf English documents 1174719 None 736675474163315314 2025-01-28 N /docs/en/fact-sheet/DMS5G3264FS.pdf GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet /docs/en/fact-sheet/DMS5G3264FS.pdf documents 736675474163315314 Fact Sheet N en None Y pdf 1 N N GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet 1.2 MB DMS5G3264FS N 1648159440615726957303 true Y Products

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4 文件

紧凑列表

应用笔记 (2)
数据手册 (1)
简介 (1)

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