A3T21H455W23S 产品信息|NXP

A3T21H455W23S

使用寿命终止

A3T21H455W23S

使用寿命终止

购买选项

工作特点

参数
Frequency (Min) (MHz)
2110
Frequency (Max) (MHz)
2200
Supply Voltage (Typ) (V)
30
参数
Peak Power (Typ) (dBm)
57
Peak Power (Typ) (W)
501
Die Technology
LDMOS

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
A3T21H455W23SR6(935368316128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
6258.0

质量

部件/12NC安全保障功能安全封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接
A3T21H455W23SR6
(935368316128)
No
260
40

配送

部件/12NC协调关税 (美国)免责声明
A3T21H455W23SR6
(935368316128)
854233

更多信息 A3T21H455W23S

The A3T21H455W23S 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.