封装信息 (1)
-
NI-780S-4L[98ASA10718D]
应用笔记 (1)
数据手册 (1)
-
A3G18D510-04S 1805-2200 MHz, 56 W Avg, 48 V Data Sheet[A3G18D510-04S]
This A3G18D510-04S 56 W symmetrical Doherty RF Power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 2200 MHz.
This part is characterized and performance is guaranteed for applications operating in the 1805 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 250 mA, VGSB = –5.0 Vdc, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
1805 MHz | 16.0 | 54.3 | 8.0 | –26.4 |
1995 MHz | 16.8 | 52.2 | 7.8 | –31.9 |
2170 MHz | 15.4 | 53.9 | 7.6 | –33.8 |
1 结果
不包含 1 不推荐用于新设计
部件 | 计算机辅助设计模型 | 状态 | Frequency (Min) (MHz) | Frequency (Max) (MHz) | Supply Voltage (Typ) (V) | Peak Power (Typ) (dBm) | Peak Power (Typ) (W) | 模具技术 |
---|---|---|---|---|---|---|---|---|
使用寿命终止 | 1805 | 2200 | 48 | 55.5 | 355 | GaN |
快速参考恩智浦 文档类别.
3 文件
紧凑列表
该选项下未搜到结果。
安全文件正在加载,请稍等
3 文件
紧凑列表
3 设计文件
安全文件正在加载,请稍等
3 设计文件
There are no recently viewed products to display.