A3G18D510-04S_1805-2200 MHz, 56 W Avg, 48 V | NXP 半导体

1805-2200 MHz, 56 W Avg., 48 V Airfast® RF Power LDMOS Transistor

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Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • RoHs compliant

RF Performance Tables

2000 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 250 mA, VGSB = –5.0 Vdc, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz 16.0 54.3 8.0 –26.4
1995 MHz 16.8 52.2 7.8 –31.9
2170 MHz 15.4 53.9 7.6 –33.8

购买/参数

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状态

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

模具技术

使用寿命终止

1805

2200

48

55.5

355

GaN

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