A3G26H200W17S 产品信息|NXP

A3G26H200W17S

使用寿命终止

A3G26H200W17S

使用寿命终止

购买选项

A3G26H200W17SR3

使用寿命终止

12NC: 935397341128

详细信息

订购

工作特点

参数
Frequency (Min) (MHz)
2496
Frequency (Max) (MHz)
2690
Supply Voltage (Typ) (V)
48
参数
Peak Power (Typ) (dBm)
52.5
Peak Power (Typ) (W)
178
Die Technology
GaN

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标REACH SVHC重量(mg)
A3G26H200W17SR3(935397341128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
3243.2

质量

部件/12NC安全保障功能安全封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接
A3G26H200W17SR3
(935397341128)
No
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
A3G26H200W17SR3
(935397341128)
854129
EAR99

更多信息 A3G26H200W17S

The A3G26H200W17S 34 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.