2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET

The MRF6S27160HR6 is designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications.

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特征

Typical Single–Carrier N–CDMA Performance: V_DD = 28 Volts, I_DQ = 1800 mA, Pout = 35 Watts Avg., f = 2660 MHz, IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain: 14.6 dB

Drain Efficiency: 22.6%

ACPR @ 885 kHz Offset: –47.8 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 160 Watts CW Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V_DD Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
RoHS Compliant
In Tape and Reel. R6 suffix = 150 Units per 56 mm, 13 inch Reel.

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2 文件

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MRF6P27160HR6 2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET

PDF版本 2Dec 29, 2008498.9 KBMRF6P27160HEnglish
封装信息
98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins

PDF版本 HOct 25, 2019159.0 KBSOT1787-1English

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5 设计文件

模型
MRF6P27160H RF High-Power Model AWR Product Model Design Kit

ZIP版本 1Jul 22, 2011 00:00:00965.6 KBMRF6P27160H_MDL_AWR

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模型
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTML版本 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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模型
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTML版本 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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模型
MRF6P27160H RF High-Power Model ADS Product Model Design Kit

ZIP版本 2Jun 17, 2019 00:00:00415.3 KBMRF6P27160H_MDL_ADS

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计算器
MRF6P27160HR6 RF Power Electromigration MTTF Calculation Program

XLS版本 2Aug 1, 2007 00:00:0044.0 KBMRF6P27160H_MTTF_CALC

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2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET

产品详情

特征

文档

过滤方式

MRF6P27160HR6 2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET

98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins

设计资源

设计文件

过滤方式

MRF6P27160H RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRF6P27160H RF High-Power Model ADS Product Model Design Kit

MRF6P27160HR6 RF Power Electromigration MTTF Calculation Program

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