MMRF1317H_1030-1090 MHz, 1300 W Peak, 50 V | NXP 半导体

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1030-1090 MHz, 1300 W Peak, 50 V RF Power LDMOS Transistors

MMRF1317H
不推荐用于新设计
These 1300 W RF power transistors, MMRF1317H and MMRF1317HS, are designed for applications operating at frequencies between 1020 and 1100 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and secondary surveillance radars.

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RF Performance Tables

Typical Performance

In 1030, 1090 MHz reference circuit, VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
1030(1)Pulse
(128 µsec, 10% Duty Cycle)		1300 Peak18.956.0
1090(1)1100 Peak18.857.9

Typical Narrowband Performance

VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
1030(2)Pulse
(128 µsec, 10% Duty Cycle)		1300 Peak18.258.1

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
1030(2)Pulse
(128 µsec, 10% Duty Cycle)		> 10:1 at all Phase Angles40
(3 dB Overdrive)		50No Device Degradation
1. Measured in 1030, 1090 MHz reference circuit.
2. Measured in 1030 MHz narrowband test circuit.
N true 0 PSPMMRF1317Hzh 6 封装信息 Package Information t790 2 应用笔记 Application Note t789 2 支持信息 Supporting Information t531 1 数据手册 Data Sheet t520 1 zh 0 false zh zh 数据手册 Data Sheet 1 1 0 English MMRF1317H 1030-1090 MHz, 1300 W Peak, 50 V RF LDMOS power transistor for defense and commercial pulse applications, such as IFF and secondary radars 1458969017636702808555 PSP 866.6 KB None None documents None 1458969017636702808555 /docs/en/data-sheet/MMRF1317H.pdf 866581 /docs/en/data-sheet/MMRF1317H.pdf MMRF1317H documents N N 2016-10-31 MMRF1317H 1030-1090 MHz, 1300 W Peak, 50 V Data Sheet /docs/en/data-sheet/MMRF1317H.pdf /docs/en/data-sheet/MMRF1317H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Mar 25, 2016 980000996212993340 Data Sheet Y N MMRF1317H 1030-1090 MHz, 1300 W Peak, 50 V Data Sheet 应用笔记 Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 封装信息 Package Information 2 4 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 5 H English 98ARB18247C, 375E-04, NI-1230S-4S B1003167510411 PSP 44.6 KB None None documents None B1003167510411 /docs/en/package-information/98ARB18247C.pdf 44578 /docs/en/package-information/98ARB18247C.pdf SOT1829-1 documents N N 2016-10-31 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf /docs/en/package-information/98ARB18247C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 23, 2016 302435339416912908 Package Information D N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins 支持信息 Supporting Information 1 6 0 English MMRF1312H, MMRF1314H, MMRF1317H, MMRF2010N RF high power LDMOS avionics devices 1458978153090712917208 PSP 726.5 KB None None documents None 1458978153090712917208 /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf 726548 /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf MILITARY_HIGH_POWER_RADAR_TRN_SI documents N N 2016-10-31 RF Military High Power Avionics Devices /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf Supporting Information N 371282830530968666 2024-03-13 pdf N en Mar 25, 2016 371282830530968666 Supporting Information Y N RF Military High Power Avionics Devices false 0 MMRF1317H downloads zh-Hans true 1 Y PSP 封装信息 2 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 4 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 /docs/en/package-information/98ARB18247C.pdf 2016-10-31 B1003167510411 PSP 5 Feb 23, 2016 Package Information 98ARB18247C, 375E-04, NI-1230S-4S None /docs/en/package-information/98ARB18247C.pdf English documents 44578 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARB18247C.pdf 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins 44.6 KB SOT1829-1 N B1003167510411 应用笔记 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 3 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 支持信息 1 /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf 2016-10-31 1458978153090712917208 PSP 6 Mar 25, 2016 Supporting Information MMRF1312H, MMRF1314H, MMRF1317H, MMRF2010N RF high power LDMOS avionics devices None /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf English documents 726548 None 371282830530968666 2024-03-13 N /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf RF Military High Power Avionics Devices /docs/en/supporting-information/Military_High_Power_Radar_TRN_SI.pdf documents 371282830530968666 Supporting Information N en None Y pdf 0 N N RF Military High Power Avionics Devices 726.5 KB MILITARY_HIGH_POWER_RADAR_TRN_SI N 1458978153090712917208 数据手册 1 /docs/en/data-sheet/MMRF1317H.pdf 2016-10-31 1458969017636702808555 PSP 1 Mar 25, 2016 Data Sheet MMRF1317H 1030-1090 MHz, 1300 W Peak, 50 V RF LDMOS power transistor for defense and commercial pulse applications, such as IFF and secondary radars None /docs/en/data-sheet/MMRF1317H.pdf English documents 866581 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MMRF1317H.pdf MMRF1317H 1030-1090 MHz, 1300 W Peak, 50 V Data Sheet /docs/en/data-sheet/MMRF1317H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N MMRF1317H 1030-1090 MHz, 1300 W Peak, 50 V Data Sheet 866.6 KB MMRF1317H N 1458969017636702808555 true Y Products

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