MMRF5014H_射频功率GaN on SiC晶体管 | NXP 半导体

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技术

1-2700 MHz, 125 W连续波，50 V宽带射频功率GaN on SiC晶体管

MMRF5014H
正常供应

MMRF5014H 125 W连续波射频功率晶体管适用于高达2700 MHz的宽带运行频率，并且包含输入匹配，可提供扩展的宽带性能。这款高增益的耐用型器件适用于连续波、脉冲和宽带射频应用。

该部件的特征参数和性能适用于运行在1–2700 MHz频段的应用。如果将该部件用于工作频率超出该范围的应用，则无法保证其性能。

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产品详情

特征

  • 十年带宽使用寿命
  • 低热阻
  • 先进的GaN on SiC工艺，提供极高的功率密度
  • 输入匹配，可延长宽带使用时间
  • 高耐用性，VSWR > 20:1
  • 符合RoHS规范
  • 适用于军事终端应用，包括：
    • 窄带和多倍频程宽带放大器
    • 雷达
    • 干扰信号
    • EMC测试
  • 同样也适用于商业应用，包括：
    • 公共移动无线通信，包括紧急服务对讲机
    • 工业、科技和医疗
    • 实验室宽带放大器
    • 无线基础架构

射频性能表

Typical Narrowband Performance

VDD = 50 Vdc, IDQ = 350 mA, TA = 25°C
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
2500(1)CW125 CW16.064.2
2500(1)Pulse (100 µsec,
20% Duty Cycle)		125 Peak18.066.8

Typical Wideband Performance

VDD = 50 Vdc, TA = 25°C
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps(2)
(dB)		 ηD(2)
(%)
200-2500(3)CW100 CW12.040.0
1300-1900(4)CW125 CW14.545.0

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test Voltage Result
2500(1)Pulse
(100 µsec,
20% Duty Cycle)		> 20:1 at All Phase Angles 5.0 Peak
(3 dB
Overdrive)		50No
Device
Degradation
1. Measured in 2500 MHz narrowband test circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 200-2500 MHz broadband reference circuit.
4. Measured in 1300-1900 MHz broadband reference circuit.
N true 0 PSPMMRF5014Hzh 5 封装信息 Package Information t790 1 工程设计要点 Technical Notes t521 1 应用笔记 Application Note t789 1 支持信息 Supporting Information t531 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 3 English MMRF5014H 125 watt CW RF power GaN transistor for wideband RF amplifiers targeting military and industrial applications 1430838154488706884344 PSP 788.8 KB None None documents None 1430838154488706884344 /docs/en/data-sheet/MMRF5014H.pdf 788842 /docs/en/data-sheet/MMRF5014H.pdf MMRF5014H documents N N 2017-04-13 MMRF5014H 125 W CW, 50 V RF Power GaN Data Sheet /docs/en/data-sheet/MMRF5014H.pdf /docs/en/data-sheet/MMRF5014H.pdf Data Sheet N 980000996212993340 2024-03-13 pdf N en May 25, 2018 980000996212993340 Data Sheet Y N MMRF5014H 125 W CW, 50 V RF Power GaN Data Sheet 应用笔记 Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 工程设计要点 Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 1 4 O English 98ASA00795D, NI-360H-2SB 1415229469957723384286 PSP 49.4 KB None None documents None 1415229469957723384286 /docs/en/package-information/98ASA00795D.pdf 49376 /docs/en/package-information/98ASA00795D.pdf SOT1791-1 documents N N 2016-10-31 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB /docs/en/package-information/98ASA00795D.pdf /docs/en/package-information/98ASA00795D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Nov 5, 2014 302435339416912908 Package Information D N 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB 支持信息 Supporting Information 1 5 0 English NXP<sup>&#174;</sup> 125 watt CW GaN transistor for wideband RF amplifiers targeting military and industrial applications 1416728611146733706467 PSP 450.0 KB None None documents None 1416728611146733706467 /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf 449975 /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf MMRF5014H_50V_GAN_TRN_SI documents N N 2016-10-31 MMRF5014H: 125 W CW GaN-on-SiC Transistor /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf Supporting Information N 371282830530968666 2024-03-13 pdf N en Nov 23, 2014 371282830530968666 Supporting Information Y N MMRF5014H: 125 W CW GaN-on-SiC Transistor false 0 MMRF5014H downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASA00795D.pdf 2016-10-31 1415229469957723384286 PSP 4 Nov 5, 2014 Package Information 98ASA00795D, NI-360H-2SB None /docs/en/package-information/98ASA00795D.pdf English documents 49376 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00795D.pdf 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB /docs/en/package-information/98ASA00795D.pdf documents 302435339416912908 Package Information N en None D pdf O N N 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB 49.4 KB SOT1791-1 N 1415229469957723384286 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 应用笔记 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 支持信息 1 /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf 2016-10-31 1416728611146733706467 PSP 5 Nov 23, 2014 Supporting Information NXP<sup>&#174;</sup> 125 watt CW GaN transistor for wideband RF amplifiers targeting military and industrial applications None /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf English documents 449975 None 371282830530968666 2024-03-13 N /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf MMRF5014H: 125 W CW GaN-on-SiC Transistor /docs/en/supporting-information/MMRF5014H_50V_GaN_TRN_SI.pdf documents 371282830530968666 Supporting Information N en None Y pdf 0 N N MMRF5014H: 125 W CW GaN-on-SiC Transistor 450.0 KB MMRF5014H_50V_GAN_TRN_SI N 1416728611146733706467 数据手册 1 /docs/en/data-sheet/MMRF5014H.pdf 2017-04-13 1430838154488706884344 PSP 1 May 25, 2018 Data Sheet MMRF5014H 125 watt CW RF power GaN transistor for wideband RF amplifiers targeting military and industrial applications None /docs/en/data-sheet/MMRF5014H.pdf English documents 788842 None 980000996212993340 2024-03-13 N /docs/en/data-sheet/MMRF5014H.pdf MMRF5014H 125 W CW, 50 V RF Power GaN Data Sheet /docs/en/data-sheet/MMRF5014H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 3 N N MMRF5014H 125 W CW, 50 V RF Power GaN Data Sheet 788.8 KB MMRF5014H N 1430838154488706884344 true Y Products

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