A3G26H350W17S_2496-2690 MHz，59 W平均值，48 V | NXP 半导体

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2496-2690 MHz，59 W平均值，48 V Airfast® LDMOS射频功率晶体管

A3G26H350W17S
使用寿命终止

A3G26H350W17S 59 W非对称Doherty GaN射频功率晶体管专为2496到2690 MHz频率且需要宽瞬时带宽的移动通信基站应用而设计。

该部件的特征参数和性能适用于运行在2496–2690 MHz频段的应用。如果将该部件用于工作频率超出该范围的应用，则无法保证其性能。

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特征

  • 高终端阻抗，支持最佳宽带性能
  • 先进的高性能内部封装Doherty
  • 利用新一代信号改进线性化误差矢量幅值
  • 可承受极高的输出VSWR和宽带运行条件
  • 符合RoHS规范

射频性能表

2600 MHz

典型Doherty单载波W-CDMA特征性能：VDD = 48 Vdc，IDQA = 250 mA，VGSB = -5.5 Vdc，输出功率 = 59 W平均值，输入信号PAR = 9.9 dB @ 0.01% CCDF。
频率 Gps
(dB)		 ηD
(%)		 输出PAR
(dB)		 ACPR
(dBc)
2496 MHz13.349.98.9-33.2
2590 MHz13.548.59.1-37.2
2690 MHz13.348.58.9-34.5

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Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

模具技术

A3G26H350W17S
数据手册

使用寿命终止

2496

2690

48

56.2

420

GaN

N true 0 PSPA3G26H350W17Szh 2 应用笔记 Application Note t789 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 1 English A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations 1607114083379704992677 PSP 377.6 KB None None documents None 1607114083379704992677 /docs/en/data-sheet/A3G26H350W17S.pdf 377610 /docs/en/data-sheet/A3G26H350W17S.pdf A3G26H350W17S documents N N 2020-12-04 A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Data Sheet /docs/en/data-sheet/A3G26H350W17S.pdf /docs/en/data-sheet/A3G26H350W17S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jan 20, 2021 980000996212993340 Data Sheet Y N A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Data Sheet 应用笔记 Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages false 0 A3G26H350W17S downloads zh-Hans true 1 Y PSP Y Y 应用笔记 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 数据手册 1 /docs/en/data-sheet/A3G26H350W17S.pdf 2020-12-04 1607114083379704992677 PSP 1 Jan 20, 2021 Data Sheet A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations None /docs/en/data-sheet/A3G26H350W17S.pdf English documents 377610 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3G26H350W17S.pdf A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Data Sheet /docs/en/data-sheet/A3G26H350W17S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Data Sheet 377.6 KB A3G26H350W17S N 1607114083379704992677 true Y Products

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