3700-3980 MHz, 7.6 W Avg., 48 V Airfast® RF Power GaN Transistor

滚动图片以放大

Features

  • High terminal impedances for optimal broadband performance
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for low complexity linearization systems
  • Optimized for massive MIMO active antenna systems for 5G base stations
  • RoHS compliant

部件编号包含: A5G38H055N.

RF Performance Table

3700–3980 MHz

Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 45 mA, VGSB = –3.9 Vdc, Pout = 7.6 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)1. All data measured in reference circuit with device soldered to printed circuit board

购买/参数










































































































文档

快速参考恩智浦 文档类别.

4 文件

设计文件

快速参考恩智浦 设计文件类型.

3 设计文件

支持

您需要什么帮助?