A3G26H501W17S_2496-2690 MHz, 56 W Avg, 48 V

A3G26H501W17S_2496-2690 MHz, 56 W Avg, 48 V | NXP 半导体

The A3G26H501W17S 56 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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数据手册

应用笔记

产品详情

Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
RoHS compliant

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: V_DD = 48 Vdc, I_DQA = 350 mA, V_GSB = –5.0 Vdc, P_out = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	P3dB (dBm)⁽²⁾	ACPR (dBc)
2496 MHz	14.0	46.3	56.6	–35.4
2590 MHz	14.5	45.1	57.1	–36.6
2690 MHz	14.4	47.4	56.0	–33.2

1. All data measured in fixture with device soldered to heatsink.
2. Data measured at pulsed CW, 10 µsec(on), 10% duty cycle.

购买/参数

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设计资源

设计文件

快速参考恩智浦设计文件类型.

4 设计文件

模型
A3G26H501W17S Carrier S-Parameters

S2P版本 0Jun 24, 201995.4 KBA3G26H501W17S-CARRIER

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模型
A3G26H501W17S Peaking Class AB S-Parameters

S2P版本 0Jun 24, 201995.3 KBA3G26H501W17S-PEAKING-CLASS-AB

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模型
A3G26H501W17S Peaking Class C S-Parameters

S2P版本 0Jun 24, 201995.4 KBA3G26H501W17S-PEAKING-CLASS-C

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印刷电路板与电路图
A3G26H501W17S 2600 MHz PCB DXF file

ZIP版本 1Jun 24, 201963.6 KBA3G26H501W17S-2600-PCB

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A3G26H501W17S 2496-2690 MHz, 56 W Avg., 48 V Airfast® RF Power GaN Transistor

产品详情

Features

RF Performance Table

2600 MHz

购买/参数

文档

过滤方式

工程设计要点 (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

应用笔记 (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

数据手册 (1)

A3G26H501W17S 2496-2690 MHz, 56 W Avg, 48 V Data Sheet[A3G26H501W17S]

过滤方式

工程设计要点 (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

应用笔记 (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

数据手册 (1)

A3G26H501W17S 2496-2690 MHz, 56 W Avg, 48 V Data Sheet[A3G26H501W17S]

设计资源

设计文件

过滤方式

A3G26H501W17S Carrier S-Parameters

A3G26H501W17S Peaking Class AB S-Parameters

A3G26H501W17S Peaking Class C S-Parameters

A3G26H501W17S 2600 MHz PCB DXF file

过滤方式

筛选条件

A3G26H501W17S Carrier S-Parameters

A3G26H501W17S Peaking Class AB S-Parameters

A3G26H501W17S Peaking Class C S-Parameters

A3G26H501W17S 2600 MHz PCB DXF file

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近期查看的产品

A3G26H501W17S 2496-2690 MHz, 56 W Avg., 48 V Airfast^® RF Power GaN Transistor