MRF24G300HS 产品信息|NXP

MRF24G300HS

使用寿命终止

MRF24G300HS

使用寿命终止

特点


RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V

封装


CFM4F: CFM4F, ceramic, flange mount flat package; 4 terminals; 9.78 mm x 20.53 mm x 3.75 mm body

购买选项

MRF24G300HSR5

使用寿命终止

12NC: 935389771178

详细信息

订购

工作特点

参数
fi(RF) [max] (MHz)
2500
Number of pins
4
Package Style
CFM
Amp Class
AB
Test Signal
CW
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
GaN
Thermal Resistance (Spec) (℃/W)
0.52
P1dB (Typ) (dBm)
54.8
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
2400, 2500
Efficiency (Typ) (%)
73
Frequency Band (Hz)
2400000000, 2500000000
参数
Description
RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V
fi(RF) [min] (MHz)
2400
P1dB (Typ) (W)
300
Gain (Typ) (dB)
15.2
Power Gain (Typ) (dB) @ f (MHz)
15.2 @ 2450
Frequency (Max) (MHz)
2500
Frequency (Min) (MHz)
2400
Frequency (Min-Max) (GHz)
2.4 to 2.5
frange [max] (MHz)
2500
frange [min] (MHz)
2400
Rth(j-a) (K/W)
0.52
Matching
unmatched
Modes of Operation
continuous wave

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标REACH SVHC重量(mg)
MRF24G300HSR5(935389771178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
3313.817

质量

部件/12NC安全保障功能安全封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接
MRF24G300HSR5
(935389771178)
No
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
MRF24G300HSR5
(935389771178)
854129
EAR99

更多信息 MRF24G300HS

These 300 W CW GaN transistors, MRF24G300HS and MRF24G300H, are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments.

These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when these parts are used in applications designed outside of these frequencies.