设计文件
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设计文件类型.
2 设计文件
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模型
MRF24G300HS S-Parameters
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印刷电路板与电路图
MRF24G300HS 2400-2500 MHz Reference Circuit Design Files
300 W CW over 2400-2500 MHz, 50 V RF Power GaN Transistor
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These 300 W CW GaN transistors, MRF24G300HS and MRF24G300H, are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments.
These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when these parts are used in applications designed outside of these frequencies.
产品详情
特征
- Advanced GaN on SiC, for optimal thermal performance
- Characterized for CW, long pulse (up to several seconds) and short pulse operations
- Device can be used in a single-ended or push-pull configuration
- Input matched for simplified input circuitry
- 适用于55 V电压
- 适合线性应用
- 符合RoHS规范
- 工业加热
- Welding and heat sealing
- 等离子生成
- 照明
- Scientific instrumentation
- 医疗
- 微波消融
- 透热疗法
部件编号包含： MRF24G300H, MRF24G300HS, MRF24G300HS-2450.
射频性能表
负载不匹配/耐用性
| 频率 (MHz) |
信号类型 | VSWR | 输入功率 (W) |
测试 电压 |
结果 |
| 2450 | 脉冲 (100 µsec，20%占空比) | > 20:1 at All Phase Angles | 12.6 Peak | 55 | 无设备退化 |
典型性能
In 2400-2500 MHz MRF24G300HS reference circuit, VDD = 48 Vdc, VGS(A+B) = –5 Vdc (1)| 频率 (MHz) |
信号类型 | 输入功率 (W) |
输出功率 (W) |
Gps (dB) |
ηD (%) |
| 2400 | 连续波 | 10.0 | 336 | 15.3 | 70.4 |
| 2450 | 10.0 | 332 | 15.2 | 73.0 | |
| 2500 | 10.0 | 307 | 14.9 | 74.4 |