MRF24G300HS_300 W CW, 2400-2500 MHz, 50 V | NXP 半导体

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300 W CW over 2400-2500 MHz, 50 V RF Power GaN Transistor

MRF24G300HS
正常供应
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These 300 W CW GaN transistors, MRF24G300HS and MRF24G300H, are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments.

These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when these parts are used in applications designed outside of these frequencies.

产品详情

特征

  • Advanced GaN on SiC, for optimal thermal performance
  • Characterized for CW, long pulse (up to several seconds) and short pulse operations
  • Device can be used in a single-ended or push-pull configuration
  • Input matched for simplified input circuitry
  • 适用于55 V电压
  • 适合线性应用
  • 符合RoHS规范
  • 工业加热
  • Welding and heat sealing
  • 等离子生成
  • 照明
  • Scientific instrumentation
  • 医疗
    • 微波消融
    • 透热疗法

射频性能表

负载不匹配/耐用性

频率
(MHz)		 信号类型 VSWR 输入功率
(W)		 测试
电压		 结果
2450脉冲
(100 µsec，20%占空比)		> 20:1
at All Phase Angles		12.6 Peak55无设备退化

典型性能

In 2400-2500 MHz MRF24G300HS reference circuit, VDD = 48 Vdc, VGS(A+B) = –5 Vdc (1)
频率
(MHz)		 信号类型 输入功率
(W)		 输出功率
(W)		 Gps
(dB)		 ηD
(%)
2400连续波10.033615.370.4
245010.033215.273.0
250010.030714.974.4
1. 所有数据均在一个装置中测量，设备焊接到散热器上。

购买/参数

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N true 0 PSPMRF24G300HSzh 5 封装信息 Package Information t790 2 工程设计要点 Technical Notes t521 1 应用笔记 Application Note t789 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 0 English MRF24G300HS, MRF24G300H 300 W CW over 2400-2500 MHz, 50 V RF power GaN transistor for industrial, scientific, medical (ISM) applications at 2450 MHz. 1570146481833740755502 PSP 265.8 KB None None documents None 1570146481833740755502 /docs/en/data-sheet/MRF24G300HS.pdf 265806 /docs/en/data-sheet/MRF24G300HS.pdf MRF24G300HS documents N N 2019-10-03 ARCHIVED - MRF24G300HS 300 W CW, 2400-2500 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF24G300HS.pdf /docs/en/data-sheet/MRF24G300HS.pdf Data Sheet N 980000996212993340 2024-02-14 pdf N en Sep 23, 2019 980000996212993340 Data Sheet Y N ARCHIVED - MRF24G300HS 300 W CW, 2400-2500 MHz, 50 V Data Sheet 应用笔记 Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 工程设计要点 Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 2 4 C English 98ASA10718D, 465H-02, NI-780S-4L 1145376001821716037786 PSP 42.9 KB None None documents None 1145376001821716037786 /docs/en/package-information/98ASA10718D.pdf 42869 /docs/en/package-information/98ASA10718D.pdf 98ASA10718D documents N N 2016-10-31 NI-780S-4L /docs/en/package-information/98ASA10718D.pdf /docs/en/package-information/98ASA10718D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Aug 15, 2016 302435339416912908 Package Information D N NI-780S-4L 5 A English 98ASA10793D, 465M-01, NI 780H-4L 1177631115779705085440 PSP 47.9 KB None None documents None 1177631115779705085440 /docs/en/package-information/98ASA10793D.pdf 47948 /docs/en/package-information/98ASA10793D.pdf SOT1827-1 documents N N 2016-10-31 98ASA10793D, NI-780H-4L /docs/en/package-information/98ASA10793D.pdf /docs/en/package-information/98ASA10793D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 21, 2016 302435339416912908 Package Information D N 98ASA10793D, NI-780H-4L false 0 MRF24G300HS downloads zh-Hans true 1 Y PSP 封装信息 2 /docs/en/package-information/98ASA10718D.pdf 2016-10-31 1145376001821716037786 PSP 4 Aug 15, 2016 Package Information 98ASA10718D, 465H-02, NI-780S-4L None /docs/en/package-information/98ASA10718D.pdf English documents 42869 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10718D.pdf NI-780S-4L /docs/en/package-information/98ASA10718D.pdf documents 302435339416912908 Package Information N en None D pdf C N N NI-780S-4L 42.9 KB 98ASA10718D N 1145376001821716037786 /docs/en/package-information/98ASA10793D.pdf 2016-10-31 1177631115779705085440 PSP 5 Mar 21, 2016 Package Information 98ASA10793D, 465M-01, NI 780H-4L None /docs/en/package-information/98ASA10793D.pdf English documents 47948 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10793D.pdf 98ASA10793D, NI-780H-4L /docs/en/package-information/98ASA10793D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA10793D, NI-780H-4L 47.9 KB SOT1827-1 N 1177631115779705085440 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 应用笔记 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 数据手册 1 /docs/en/data-sheet/MRF24G300HS.pdf 2019-10-03 1570146481833740755502 PSP 1 Sep 23, 2019 Data Sheet MRF24G300HS, MRF24G300H 300 W CW over 2400-2500 MHz, 50 V RF power GaN transistor for industrial, scientific, medical (ISM) applications at 2450 MHz. None /docs/en/data-sheet/MRF24G300HS.pdf English documents 265806 None 980000996212993340 2024-02-14 N /docs/en/data-sheet/MRF24G300HS.pdf ARCHIVED - MRF24G300HS 300 W CW, 2400-2500 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF24G300HS.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - MRF24G300HS 300 W CW, 2400-2500 MHz, 50 V Data Sheet 265.8 KB MRF24G300HS N 1570146481833740755502 true Y Products

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封装信息 (2)
工程设计要点 (1)
应用笔记 (1)
数据手册 (1)

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