MRF24G300H 产品信息|NXP

MRF24G300H

正常供应

MRF24G300H

正常供应

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工作特点

参数
fi(RF) [max] (MHz)
2500
Number of pins
4
Package Style
CFM
Amp Class
AB
Test Signal
CW
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
GaN
Thermal Resistance (Spec) (℃/W)
0.52
P1dB (Typ) (dBm)
54.8
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
2400, 2500
Efficiency (Typ) (%)
73
Frequency Band (Hz)
2400000000, 2500000000
参数
Description
RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V
fi(RF) [min] (MHz)
2400
P1dB (Typ) (W)
300
Gain (Typ) (dB)
15.2
Power Gain (Typ) (dB) @ f (MHz)
15.2 @ 2450
Frequency (Max) (MHz)
2500
Frequency (Min) (MHz)
2400
Frequency (Min-Max) (GHz)
2.4 to 2.5
frange [max] (MHz)
2500
frange [min] (MHz)
2400
Rth(j-a) (K/W)
0.52
Matching
unmatched
Modes of Operation
continuous wave

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更多信息 MRF24G300HS

These 300 W CW GaN transistors, MRF24G300HS and MRF24G300H, are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments.

These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when these parts are used in applications designed outside of these frequencies.