MMRF1317H 产品信息|NXP

MMRF1317H

不推荐用于新设计

MMRF1317H

不推荐用于新设计

特点


RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V

封装


CFM4F: CFM4F, ceramic, flange mount flat package; 4 terminals; 13.72 mm pitch, 10.16 mm x 41.15 mm x 4.575 mm body

购买选项

MMRF1317HR5

不推荐用于新设计

12NC: 935318748178

详细信息

订购

从分销商处购买

工作特点

参数
Frequency (Min) (MHz)
1030
Frequency (Max) (MHz)
1090
Supply Voltage (Typ) (V)
50
参数
P1dB (Typ) (dBm)
61.1
P1dB (Typ) (W)
1300
Die Technology
LDMOS

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
MMRF1317HR5(935318748178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
13192.6

质量

部件/12NC安全保障功能安全封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接
MMRF1317HR5
(935318748178)
No
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
MMRF1317HR5
(935318748178)
854233
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
MMRF1317HR5
(935318748178)
2025-04-162025-05-26202504007IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

更多信息 MMRF1317H

These 1300 W RF power transistors, MMRF1317H and MMRF1317HS, are designed for applications operating at frequencies between 1020 and 1100 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and secondary surveillance radars.