MMRF1312H 产品信息|NXP

MMRF1312H

使用寿命终止

MMRF1312H

使用寿命终止

特点


RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V

封装


CFM4F: CFM4F, ceramic, flange mount flat package; 4 terminals; 13.72 mm pitch, 10.16 mm x 41.15 mm x 4.575 mm body

购买选项

MMRF1312HR5

使用寿命终止

12NC: 935316216178

详细信息

订购

工作特点

参数
Frequency (Min) (MHz)
900
Frequency (Max) (MHz)
1215
Supply Voltage (Typ) (V)
52
参数
P1dB (Typ) (dBm)
60
P1dB (Typ) (W)
1000
Die Technology
LDMOS

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
MMRF1312HR5(935316216178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
13192.6

质量

部件/12NC安全保障功能安全封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接
MMRF1312HR5
(935316216178)
No
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
MMRF1312HR5
(935316216178)
854233
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
MMRF1312HR5
(935316216178)
2025-04-162025-05-26202504007IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

更多信息 MMRF1312H

These RF power devices, MMRF1312H, MMRF1312HS and MMRF1312GS, are designed for pulse applications operating at frequencies from 900 to 1215 MHz. The devices are suitable for use in pulse applications with large duty cycles and long pulses and are ideal for use in high power military and commercial L-Band radar applications such as IFF and DME/TACAN.