A5G26S004N 产品信息|NXP

A5G26S004N

正常供应

A5G26S004N

正常供应

购买选项

工作特点

参数
Frequency (Min) (MHz)
2300
Frequency (Max) (MHz)
2690
Supply Voltage (Typ) (V)
48
参数
Peak Power (Typ) (dBm)
36
Peak Power (Typ) (W)
4
Die Technology
GaN

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标REACH SVHC重量(mg)
A5G26S004NT6(935418045528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
400.0

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接无铅焊接
A5G26S004NT6
(935418045528)
No
3
260
40

配送

部件/12NC协调关税 (美国)免责声明
A5G26S004NT6
(935418045528)
854129

更多信息 A5G26S004N

This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2300 to 2690 MHz.