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RDGD31603PHSEVM
正常供应 -
3-Phase Reference Design for VE-Trac™ Drive SiC Module Featuring GD3160.
套件包含
- 配备KL25Z MCU的KITGD3160TREVB转换板
- Micro USB线缆
- 快速入门指南
紧凑列表
面向带有GD3160功能的VE-Trac™ Drive SiC模块的3相参考设计
RDGD31603PHSEVM是三相参考设计和评估套件，装有六个面向IGBT/SiC MOSFET设备的GD3160栅极驱动器。该套件包括可与PC连接的Freedom KL25Z微控制器硬件。Flex GUI软件需要安装在PC上，PC采用菊花链或独立配置通过SPI寄存器与GD3160进行通信。该套件允许用户在没有任何软件开发的情况下配置设备，并在单相上进行SC或双脉冲。
RDGD31603PHSEVM也兼容NXP MPC5775B/E-EVB(不包含在本套件内)，可使用我们的软件示例进行全电机控制。该评估套件用于连接到兼容封装的VE-Trac SiC OnSemi模块(不包含在本套件内)或任何具有相同引脚输出的其他模块。
产品详情
Features
Gate Driver
- Integrated Galvanic signal isolation (up to 8 kV)
- High gate current integrated: 15 A source/sink capable
- SPI interface for safety monitoring, configuration, and diagnostic reporting
- Fail-safe state management from LV and HV domain for user-selectable safe state
- Temperature sense compatible with diode-based temperature sensors, NTC and PTC thermistors
- Configurable desaturation and current sense optimized for protecting SiC and IGBTs
- Integrated soft shutdown, two-level turn-off, optimized for unique gate drive requirements of SiC
- Integrated ADC for monitoring parameters from HV domain
- CMTI > 100 V/ns
- Available in 5.0 or 3.3 V logic interface variants
- Certified compliant with ISO 26262, supporting ASIL D level functional safety
GD3160
- Advanced single channel gate driver for IGBT and SiC MOSFETs. Integrated galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control
购买选项
文档
快速参考恩智浦 文档类别.
2 文件
用户手册 (1)
用户指南 (1)
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Getting Started with the RDGD31603PHSEVM Half-Bridge Evaluation Board[GS-RDGD31603PHSEVM]快速入门
2 文件
紧凑列表
用户手册 (1)
用户指南 (1)
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Getting Started with the RDGD31603PHSEVM Half-Bridge Evaluation Board[GS-RDGD31603PHSEVM]快速入门
设计资源
设计文件
快速参考恩智浦
设计文件类型.
2 设计文件
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印刷电路板与电路图
RDGD31603PHSEVM Schematics
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设计文件-其他
RDGD31603PHSEVM Design Files
支持
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