A3I25X050N_2300-2700 MHz, 5.6 W Avg, 28 V | NXP 半导体

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技术

2300-2700 MHz, 5.6 W Avg., 28 V Airfast® Wideband Integrated RF LDMOS Amplifier

A3I25X050N
使用寿命终止

The A3I25X050N integrated Doherty circuit is designed with on-chip matching that makes it usable from 2300 to 2700 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.

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Features

  • Integrated Doherty splitter and combiner
  • On-chip matching (50 ohm input, DC blocked)
  • Integrated quiescent current temperature compensation with enable/disable function
  • RoHS compliant

RF Performance Table

2600 MHz

5.6 W Avg. — Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ(Carrier) = 130 mA, VGS(Peaking) = 3.75 Vdc, Pout = 5.6 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 PAE
(%)		 ACPR
(dBc)
2496 MHz 28.5 38.2 –35.3
2590 MHz 28.8 39.0 –35.5
2690 MHz 28.5 37.0 –35.9
8.7 W Avg. — Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = 28 Vdc, IDQ(Carrier) = 130 mA, VGS(Peaking) = 3.0 Vdc, Pout = 8.7 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 PAE
(%)		 ACPR
(dBc)
2496 MHz 27.8 44.4 –32.1
2590 MHz 28.0 44.8 –31.9
2690 MHz 28.0 43.7 –30.8

2300 MHz

8.9 W Avg. — Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ(Carrier) = 130 mA, VGS(Peaking) = 3.5 Vdc, Pout = 8.9 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 PAE
(%)		 ACPR
(dBc)
2300 MHz 29.2 44.5 –30.6
2350 MHz 28.6 45.0 –31.5
2400 MHz 28.3 44.7 –33.0

购买/参数

2 结果

不包含 2 不推荐用于新设计

部件

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状态

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

模具技术

A3I25X050GN
数据手册

使用寿命终止

2300

2700

28

47.4

55

LDMOS

A3I25X050N
数据手册

使用寿命终止

2300

2700

28

47.4

55

LDMOS

N true 0 PSPA3I25X050Nzh 4 应用笔记 Application Note t789 3 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 0 English A3I25X050N 2300-2700 MHz, 5.6 W Avg, 28 V Airfast wideband integrated RFIC power amplifier for cellular base stations 1576535840609724141532 PSP 637.5 KB None None documents None 1576535840609724141532 /docs/en/data-sheet/A3I25X050N.pdf 637525 /docs/en/data-sheet/A3I25X050N.pdf A3I25X050N documents N N 2019-12-16 A3I25X050N 2300-2700 MHz, 5.6 W Avg, 28 V Data Sheet /docs/en/data-sheet/A3I25X050N.pdf /docs/en/data-sheet/A3I25X050N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Dec 9, 2019 980000996212993340 Data Sheet Y N A3I25X050N 2300-2700 MHz, 5.6 W Avg, 28 V Data Sheet 应用笔记 Application Note 3 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 3 1 English This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. 1078170496490702478807 PSP 140.7 KB None None documents None 1078170496490702478807 /docs/en/application-note/AN1987.pdf 140747 /docs/en/application-note/AN1987.pdf AN1987 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf /docs/en/application-note/AN1987.pdf Application Note N 645036621402383989 2024-03-13 pdf N en May 12, 2004 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 4 0 English Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. 1065730389394721762372 PSP 134.6 KB None None documents None 1065730389394721762372 /docs/en/application-note/AN1977.pdf 134579 /docs/en/application-note/AN1977.pdf AN1977 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf /docs/en/application-note/AN1977.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Oct 9, 2003 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 false 0 A3I25X050N downloads zh-Hans true 1 Y PSP 应用笔记 3 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN1987.pdf 2016-10-31 1078170496490702478807 PSP 3 May 12, 2004 Application Note This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. None /docs/en/application-note/AN1987.pdf English documents 140747 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1987.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 140.7 KB AN1987 N 1078170496490702478807 /docs/en/application-note/AN1977.pdf 2016-10-31 1065730389394721762372 PSP 4 Oct 9, 2003 Application Note Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. None /docs/en/application-note/AN1977.pdf English documents 134579 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1977.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 134.6 KB AN1977 N 1065730389394721762372 数据手册 1 /docs/en/data-sheet/A3I25X050N.pdf 2019-12-16 1576535840609724141532 PSP 1 Dec 9, 2019 Data Sheet A3I25X050N 2300-2700 MHz, 5.6 W Avg, 28 V Airfast wideband integrated RFIC power amplifier for cellular base stations None /docs/en/data-sheet/A3I25X050N.pdf English documents 637525 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3I25X050N.pdf A3I25X050N 2300-2700 MHz, 5.6 W Avg, 28 V Data Sheet /docs/en/data-sheet/A3I25X050N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A3I25X050N 2300-2700 MHz, 5.6 W Avg, 28 V Data Sheet 637.5 KB A3I25X050N N 1576535840609724141532 true Y Products

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数据手册 (1)

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