A3I25D080N_2300-2690 MHz, 8.3 W平均值, 28 V | NXP 半导体

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工业

消费电子

技术

2300-2690 MHz, 8.3 W平均值, 28 V Airfast®LDMOS射频集成功率放大器

A3I25D080N
正常供应

A3I25D080N和A3I25D080GN Doherty集成电路具有片上匹配功能，适用于2300至2690 MHz的频率范围。这个多级结构的额定电压为20至32 V，涵盖所有典型的移动通信基站调制格式。

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产品详情

特征

  • 内置Doherty分路器和合成器
  • 射频解耦漏极引脚缩减整体板空间
  • 片上匹配(50 Ohm隔直输入)
  • 集成静态电流温度补偿，具有启用/禁用功能
  • 符合RoHS规范

射频性能表

2600 MHz

典型Doherty单载波W-CDMA特征性能：VDD = 28 Vdc，IDQ (载波) = 175 mA，VGS (峰值) = 1.85 Vdc，输出功率 = 8.5 W平均值，输入信号PAR = 9.9 dB @ 0.01% CCDF。 (1)

频率 Gps
(dB)		 功率附加效率
(%)		 ACPR
(dBc)
2496 MHz 29.7 36.7 -37.9
2590 MHz 29.6 37.0 -37.5
2690 MHz 29.4 36.1 -36.2

2300 MHz

典型Doherty单载波W-CDMA性能：VDD = 28 Vdc，IDQ (载波) = 182 mA，VGS (峰值) = 2.42 Vdc，输出功率 = 8.9 W平均值，输入信号PAR = 9.9 dB @ 0.01% CCDF。 (1)

频率 Gps
(dB)		 功率附加效率
(%)		 ACPR
(dBc)
2300 MHz 30.3 36.1 -36.2
2350 MHz 30.2 35.5 -38.7
2400 MHz 30.2 35.2 -39.5

1. 所有数据均在一个装置中测量，设备焊接到散热器上。

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2 结果

包含 0 不推荐用于新设计

部件

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计算机辅助设计模型

状态

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

模具技术

A3I25D080GN
数据手册

正常供应

2300

2690

28

49.3

85

LDMOS

A3I25D080N
数据手册

正常供应

2300

2690

28

49.3

85

LDMOS

N true 0 PSPA3I25D080Nzh 5 应用笔记 Application Note t789 4 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 0 English A3I25D080N 2300-2690 MHz, 8.3 W Avg., 28 V Airfast<sup>&reg;</sup>RF LDMOS integrated power amplifier for cellular base stations 1616636622151717341481 PSP 476.0 KB None None documents None 1616636622151717341481 /docs/en/data-sheet/A3I25D080N.pdf 476013 /docs/en/data-sheet/A3I25D080N.pdf A3I25D080N documents N N 2021-03-24 A3I25D080N 2300-2690 MHz, 8.3 W Avg., 28 V Data Sheet /docs/en/data-sheet/A3I25D080N.pdf /docs/en/data-sheet/A3I25D080N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Mar 19, 2021 980000996212993340 Data Sheet Y N A3I25D080N 2300-2690 MHz, 8.3 W Avg., 28 V Data Sheet 应用笔记 Application Note 4 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 4 1 English This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. 1078170496490702478807 PSP 140.7 KB None None documents None 1078170496490702478807 /docs/en/application-note/AN1987.pdf 140747 /docs/en/application-note/AN1987.pdf AN1987 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf /docs/en/application-note/AN1987.pdf Application Note N 645036621402383989 2024-03-13 pdf N en May 12, 2004 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 5 0 English Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. 1065730389394721762372 PSP 134.6 KB None None documents None 1065730389394721762372 /docs/en/application-note/AN1977.pdf 134579 /docs/en/application-note/AN1977.pdf AN1977 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf /docs/en/application-note/AN1977.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Oct 9, 2003 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 false 0 A3I25D080N downloads zh-Hans true 1 Y PSP 应用笔记 4 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN1987.pdf 2016-10-31 1078170496490702478807 PSP 4 May 12, 2004 Application Note This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. None /docs/en/application-note/AN1987.pdf English documents 140747 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1987.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 140.7 KB AN1987 N 1078170496490702478807 /docs/en/application-note/AN1977.pdf 2016-10-31 1065730389394721762372 PSP 5 Oct 9, 2003 Application Note Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. None /docs/en/application-note/AN1977.pdf English documents 134579 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1977.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 134.6 KB AN1977 N 1065730389394721762372 数据手册 1 /docs/en/data-sheet/A3I25D080N.pdf 2021-03-24 1616636622151717341481 PSP 1 Mar 19, 2021 Data Sheet A3I25D080N 2300-2690 MHz, 8.3 W Avg., 28 V Airfast<sup>&reg;</sup>RF LDMOS integrated power amplifier for cellular base stations None /docs/en/data-sheet/A3I25D080N.pdf English documents 476013 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3I25D080N.pdf A3I25D080N 2300-2690 MHz, 8.3 W Avg., 28 V Data Sheet /docs/en/data-sheet/A3I25D080N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A3I25D080N 2300-2690 MHz, 8.3 W Avg., 28 V Data Sheet 476.0 KB A3I25D080N N 1616636622151717341481 true Y Products

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应用笔记 (4)
数据手册 (1)

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