A5G26S008N_2300-2690MHz，平均值27dBm，48V | NXP 半导体

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2300-2690MHz，平均值27dBm，48V Airfast® GaN射频功率晶体管

A5G26S008N
正常供应

滚动图片以放大

这款27dBm GaN射频功率晶体管专为频率范围为2300至2690MHz之间的移动通信基站应用而设计。

产品详情

特性

  • 高终端阻抗，支持出色的宽带性能
  • 适用于复杂度较低的数字线性化系统
  • 通用宽带驱动器
  • 优化用于5G基站mMIMO有源天线系统
  • 符合RoHS规范

射频性能表

2600MHz

典型单载波W-CDMA参考电路性能：VDD=48Vdc，IDQ=17mA，Pout=27dBm平均值，输入信号PAR=9.9dB @ 0.01% CCDF。(1)
频率 Gps
(dB)		 ηD
(%)		 输出PAR
(dB)		 ACPR
(dBc)
2496MHz19.015.810.1-41.0
2595MHz19.416.510.1-42.4
2690MHz18.816.49.9-43.6
1. 所有数据均测自参考电路，器件焊接到印刷电路板上。

购买/参数

1 结果

包含 0 不推荐用于新设计

部件

展开描述

订购

计算机辅助设计模型

状态

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

模具技术

A5G26S008
数据手册

正常供应

2300

2690

48

40.3

10.7

GaN

N true 0 PSPA5G26S008Nzh 4 应用笔记 Application Note t789 2 数据手册 Data Sheet t520 1 简介 Fact Sheet t523 1 zh zh zh 数据手册 Data Sheet 1 1 4 English A5G26S008N 2300-2690 MHz, 27 dBm Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations 1647301643527717121986 PSP 473.9 KB None None documents None 1647301643527717121986 /docs/en/data-sheet/A5G26S008N.pdf 473891 /docs/en/data-sheet/A5G26S008N.pdf A5G26S008N documents N N 2022-03-14 A5G26S008N 2300-2690 MHz, 27 dBm Avg, 48 V Data Sheet /docs/en/data-sheet/A5G26S008N.pdf /docs/en/data-sheet/A5G26S008N.pdf Data Sheet N 980000996212993340 2024-01-17 pdf N en Oct 18, 2023 980000996212993340 Data Sheet Y N A5G26S008N 2300-2690 MHz, 27 dBm Avg, 48 V Data Sheet 应用笔记 Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 简介 Fact Sheet 1 4 1 English NXP’s extensive portfolio of RF power solutions for active antenna systems (AAS) includes GaN discrete mMIMO solutions for 64T64R and 32T32R solutions. 1648159440615726957303 PSP 1.2 MB None None documents None 1648159440615726957303 /docs/en/fact-sheet/DMS5G3264FS.pdf 1174719 /docs/en/fact-sheet/DMS5G3264FS.pdf DMS5G3264FS documents N N 2022-03-24 GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet /docs/en/fact-sheet/DMS5G3264FS.pdf /docs/en/fact-sheet/DMS5G3264FS.pdf Fact Sheet N 736675474163315314 2025-01-28 pdf N en Dec 3, 2024 736675474163315314 Fact Sheet Y N GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet false 0 A5G26S008N downloads zh-Hans true 1 Y PSP Y Y 应用笔记 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 数据手册 1 /docs/en/data-sheet/A5G26S008N.pdf 2022-03-14 1647301643527717121986 PSP 1 Oct 18, 2023 Data Sheet A5G26S008N 2300-2690 MHz, 27 dBm Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations None /docs/en/data-sheet/A5G26S008N.pdf English documents 473891 None 980000996212993340 2024-01-17 N /docs/en/data-sheet/A5G26S008N.pdf A5G26S008N 2300-2690 MHz, 27 dBm Avg, 48 V Data Sheet /docs/en/data-sheet/A5G26S008N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 4 N N A5G26S008N 2300-2690 MHz, 27 dBm Avg, 48 V Data Sheet 473.9 KB A5G26S008N N 1647301643527717121986 简介 1 /docs/en/fact-sheet/DMS5G3264FS.pdf 2022-03-24 1648159440615726957303 PSP 4 Dec 3, 2024 Fact Sheet NXP’s extensive portfolio of RF power solutions for active antenna systems (AAS) includes GaN discrete mMIMO solutions for 64T64R and 32T32R solutions. None /docs/en/fact-sheet/DMS5G3264FS.pdf English documents 1174719 None 736675474163315314 2025-01-28 N /docs/en/fact-sheet/DMS5G3264FS.pdf GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet /docs/en/fact-sheet/DMS5G3264FS.pdf documents 736675474163315314 Fact Sheet N en None Y pdf 1 N N GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet 1.2 MB DMS5G3264FS N 1648159440615726957303 true Y Products

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