A2I09VD050N_575-960 MHz, 6.3 W平均值, 48 V | NXP 半导体

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技术

575-960 MHz, 6.3 W平均值, 48 V Airfast®宽带集成射频LDMOS放大器

A2I09VD050N
正常供应
A2I09VD050N宽带集成电路具有片上匹配功能，适用于575至960 MHz的频率范围。这个多级结构的额定电压为48至55 V，涵盖所有典型的移动通信基站调制格式。

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产品详情

特征

  • 片上匹配(50 Ohm隔直输入)
  • 集成静态电流温度补偿，具有启用/禁用功能
  • 专为数字预失真纠错系统而设计
  • 为Doherty应用进行了优化
  • 符合RoHS规范

射频性能表

900 MHz

典型单载波W-CDMA特征性能：VDD = 48 Vdc，IDQ1(A+B) = 74 mA，IDQ2(A+B) = 240 mA，平均输出功率 = 6.3 W，输入信号PAR = 9.9 dB @ 0.01% CCDF。 (1)
频率 Gps
(dB)		 功率附加效率
(%)		 ACPR
(dBc)
920 MHz36.819.7–45.5
940 MHz36.819.9–45.9
960 MHz36.619.8–45.8
1. 所有数据均在一个装置中测量，器件焊接到散热器上。

购买/参数

2 结果

包含 0 不推荐用于新设计

部件

展开描述

订购

计算机辅助设计模型

状态

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

模具技术

A2I09VD050GN
数据手册

正常供应

575

960

48

48.3

67.6

LDMOS

A2I09VD050N
数据手册

正常供应

575

960

48

48.3

67.6

LDMOS

N true 0 PSPA2I09VD050Nzh 7 封装信息 Package Information t790 2 工程设计要点 Technical Notes t521 1 应用笔记 Application Note t789 3 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 0 English A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Airfast<sup>&reg;</sup> wideband integrated RFIC power amplifier for cellular base stations 1538705978411713532657 PSP 321.1 KB None None documents None 1538705978411713532657 /docs/en/data-sheet/A2I09VD050N.pdf 321147 /docs/en/data-sheet/A2I09VD050N.pdf A2I09VD050N documents N N 2018-10-04 A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2I09VD050N.pdf /docs/en/data-sheet/A2I09VD050N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Sep 26, 2018 980000996212993340 Data Sheet Y N A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Data Sheet 应用笔记 Application Note 3 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 3 1 English This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. 1078170496490702478807 PSP 140.7 KB None None documents None 1078170496490702478807 /docs/en/application-note/AN1987.pdf 140747 /docs/en/application-note/AN1987.pdf AN1987 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf /docs/en/application-note/AN1987.pdf Application Note N 645036621402383989 2024-03-13 pdf N en May 12, 2004 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 4 0 English Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. 1065730389394721762372 PSP 134.6 KB None None documents None 1065730389394721762372 /docs/en/application-note/AN1977.pdf 134579 /docs/en/application-note/AN1977.pdf AN1977 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf /docs/en/application-note/AN1977.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Oct 9, 2003 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 工程设计要点 Technical Notes 1 5 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 2 6 A English 1410552037358735230752 PSP 84.9 KB None None documents None 1410552037358735230752 /docs/en/package-information/98ASA00684D.pdf 84904 /docs/en/package-information/98ASA00684D.pdf SOT1722-3 documents N N 2016-10-31 98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins /docs/en/package-information/98ASA00684D.pdf /docs/en/package-information/98ASA00684D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 11, 2016 302435339416912908 Package Information D N 98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins 7 A English 1410552033577709421195 PSP 80.2 KB None None documents None 1410552033577709421195 /docs/en/package-information/98ASA00630D.pdf 80216 /docs/en/package-information/98ASA00630D.pdf SOT1722-1 documents N N 2016-10-31 98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins /docs/en/package-information/98ASA00630D.pdf /docs/en/package-information/98ASA00630D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 15, 2016 302435339416912908 Package Information D N 98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins false 0 A2I09VD050N downloads zh-Hans true 1 Y PSP 封装信息 2 /docs/en/package-information/98ASA00684D.pdf 2016-10-31 1410552037358735230752 PSP 6 Mar 11, 2016 Package Information None /docs/en/package-information/98ASA00684D.pdf English documents 84904 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00684D.pdf 98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins /docs/en/package-information/98ASA00684D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins 84.9 KB SOT1722-3 N 1410552037358735230752 /docs/en/package-information/98ASA00630D.pdf 2016-10-31 1410552033577709421195 PSP 7 Feb 15, 2016 Package Information None /docs/en/package-information/98ASA00630D.pdf English documents 80216 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00630D.pdf 98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins /docs/en/package-information/98ASA00630D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins 80.2 KB SOT1722-1 N 1410552033577709421195 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 5 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 应用笔记 3 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN1987.pdf 2016-10-31 1078170496490702478807 PSP 3 May 12, 2004 Application Note This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. None /docs/en/application-note/AN1987.pdf English documents 140747 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1987.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 140.7 KB AN1987 N 1078170496490702478807 /docs/en/application-note/AN1977.pdf 2016-10-31 1065730389394721762372 PSP 4 Oct 9, 2003 Application Note Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. None /docs/en/application-note/AN1977.pdf English documents 134579 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1977.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 134.6 KB AN1977 N 1065730389394721762372 数据手册 1 /docs/en/data-sheet/A2I09VD050N.pdf 2018-10-04 1538705978411713532657 PSP 1 Sep 26, 2018 Data Sheet A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Airfast<sup>&reg;</sup> wideband integrated RFIC power amplifier for cellular base stations None /docs/en/data-sheet/A2I09VD050N.pdf English documents 321147 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2I09VD050N.pdf A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2I09VD050N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Data Sheet 321.1 KB A2I09VD050N N 1538705978411713532657 true Y Products

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封装信息 (2)
工程设计要点 (1)
应用笔记 (3)
数据手册 (1)

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