A2I09VD050N 产品信息|NXP

A2I09VD050N

正常供应

A2I09VD050N

正常供应

特点


Airfast RF LDMOS Wideband Integrated Power Amplifier, 575-960 MHz, 6.3 W Avg., 48 V

封装


FM15F: FM15F, plastic, flange mount flat package; 15 terminals; 9.02 mm x 17.53 mm x 2.59 mm body

购买选项

工作特点

参数
Frequency (Min) (MHz)
575
Frequency (Max) (MHz)
960
Supply Voltage (Typ) (V)
48
参数
Peak Power (Typ) (dBm)
48.3
Peak Power (Typ) (W)
67.6
Die Technology
LDMOS

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
A2I09VD050NR1(935375787528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
1572.1

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接无铅焊接
A2I09VD050NR1
(935375787528)
No
3
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
A2I09VD050NR1
(935375787528)
854233
EAR99

更多信息 A2I09VD050N

The A2I09VD050N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.