MMRF1015GN 产品信息|NXP

MMRF1015GN

使用寿命终止

MMRF1015GN

使用寿命终止

特点


Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V

封装


FM2: FM2, plastic, flange mount package; 2 terminals; 6.1 mm x 9.65 mm x 2.03 mm body

购买选项

MMRF1015GNR1

使用寿命终止

12NC: 935315212528

详细信息

订购

工作特点

参数
fi(RF) [max] (MHz)
2000
Number of pins
2
Package Style
DFM
Amp Class
A, AB
Test Signal
2-TONE
Supply Voltage (Typ) (V)
28
Class
A, AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
2.85
P1dB (Typ) (dBm)
40
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1, 2000
Efficiency (Typ) (%)
32
Frequency Band (Hz)
1000000, 2000000000
Intermodulation Distortion - IMD (Typ) (dBc)
-37
参数
Description
Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V
fi(RF) [min] (MHz)
1
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
10 @ PEP
P1dB (Typ) (W)
10
Gain (Typ) (dB)
18
Power Gain (Typ) (dB) @ f (MHz)
18 @ 960
Frequency (Max) (MHz)
2000
Frequency (Min) (MHz)
1
Frequency (Min-Max) (GHz)
0.001 to 2
frange [max] (MHz)
2000
frange [min] (MHz)
1
Rth(j-a) (K/W)
2.85
Matching
unmatched
Modes of Operation
dual-tone modulation
Intermodulation Distortion - IM3 (Typ) (dBc)
-37

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
MMRF1015GNR1(935315212528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
548.0

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
铅焊接铅焊接无铅焊接铅焊接无铅焊接
MMRF1015GNR1
(935315212528)
No
3
260
260
40
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
MMRF1015GNR1
(935315212528)
854129
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
MMRF1015GNR1
(935315212528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

更多信息 MMRF1015N

The MMRF1015NR1 and MMRF1015GNR1 are designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.