设计文件
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1-2000 MHz, 10 W, 28 V Class A/AB RF Power MOSFETs
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产品详情
特征
- Typical Two-Tone Performance @ 960 MHz, VDD = 28 Vdc,
IDQ = 125 mA, Pout = 10 W PEP
- Power Gain: 18 dB
- Drain Efficiency: 32%
- IMD: –37 dBc
- Capable of Handling 10:1 VSWR @ 28 Vdc, 960 MHz, 10 W CW Output Power
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- On-Chip RF Feedback for Broadband Stability
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS Compliant.
- In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.
