BFU580G 产品信息|NXP

BFU580G

使用寿命终止

BFU580G

使用寿命终止

特点


NPN Wideband Silicon RF Transistor

封装


SC-73: plastic, surface-mounted package with increased heatsink; 4 leads; 4.6 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body

购买选项

工作特点

参数
Generation
5th
fT [typ] (MHz)
11000
VCEO [max] (V)
12
IC [max] (mA)
60
Ptot [max] (mW)
1000
参数
Polarity
NPN
NF (dB)
0.75
@f (MHz)
900
@IC (mA)
5
@VCE (V)
8

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标REACH SVHC重量(mg)
BFU580GX(934067974115)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
96.75175999999999

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)
铅焊接无铅焊接铅焊接无铅焊接
BFU580GX
(934067974115)
No
1
1
240
260

配送

部件/12NC协调关税 (美国)免责声明
BFU580GX
(934067974115)
854129

更多信息 BFU580

NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.

The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.