A3G22H400-04S 产品信息|NXP

A3G22H400-04S

使用寿命终止

A3G22H400-04S

使用寿命终止

特点


Airfast RF Power GaN Transistor, 1805-2200 MHz, 79 W Avg., 48 V

封装


CFM4F: CFM4F, ceramic, flange mount flat package; 4 terminals; 9.78 mm x 20.53 mm x 3.75 mm body

购买选项

A3G22H400-04SR3

使用寿命终止

12NC: 935370222128

详细信息

订购

工作特点

参数
Frequency (Min) (MHz)
1800
Frequency (Max) (MHz)
2200
Supply Voltage (Typ) (V)
48
参数
Peak Power (Typ) (dBm)
56
Peak Power (Typ) (W)
400
Die Technology
GaN

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
A3G22H400-04SR3(935370222128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
3313.683

质量

部件/12NC安全保障功能安全封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接
A3G22H400-04SR3
(935370222128)
No
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
A3G22H400-04SR3
(935370222128)
854129
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
A3G22H400-04SR3
(935370222128)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

更多信息 A3G22H400-04S

The A3G22H400-04S 79 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1800 to 2200 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.