A2V09H525-04N 产品信息|NXP

特点


Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V

封装


FM4F: FM4F, plastic, flange mount flat package; 4 terminals; 9.96 mm x 32.26 mm x 3.81 mm body

购买选项

工作特点

参数
Frequency (Min) (MHz)
720
Frequency (Max) (MHz)
960
Supply Voltage (Typ) (V)
48
参数
Peak Power (Typ) (dBm)
58.8
Peak Power (Typ) (W)
759
Die Technology
LDMOS

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
A2V09H525-04NR6(935330045528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
5323.6

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接无铅焊接
A2V09H525-04NR6
(935330045528)
No
3
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
A2V09H525-04NR6
(935330045528)
854233
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
A2V09H525-04NR6
(935330045528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label
A2V09H525-04NR6
(935330045528)
2020-05-092020-05-10202005002IOM1230 Internal Plating Thickness Change on Package Flange/Heatsink

更多信息 A2V09H525-04N

The A2V09H525-04N 120 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.