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On September 29, 2020, NXP opened the RF Gallium Nitride (GaN) 150 mm (6-inch) wafer size fab in Chandler, Arizona. This fab combines NXP’s expertise as the industry leader in RF power and its high-volume manufacturing know-how, resulting in streamlined innovation that supports the expansion of 5G base stations and advanced communication infrastructure in the industrial, aerospace and defense markets.
Our GaN fab and NXP's expertise helps advance 5G base stations, to play a central role in seamless connectivity, experienced at State Farm Stadium.
Take a virtual tour of the RF GaN Fab and explore technical sessions on GaN with NXP experts.
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Access on-demand sessions from the NXP GaN Fab experience, including panel discussions and training.
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NXP Airfast mult-chip modules enable 5G at a number of frequency bands and meet performance, time to market, size and weight requirements of 5G mMIMO networks.
NXP GaN portfolio is utilized in multiple industries, including cellular infrastructure, industrial and defense markets.