AFV09P350-04N_720-960 MHz，100 W平均值，48 V | NXP 半导体

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720-960 MHz，100 W平均值，48 V Airfast®射频功率晶体管

AFV09P350-04N
正常供应
The AFV09P350-04NR3和AFV09P350-04GNR3 100 W对称Doherty射频功率LDMOS晶体管专为720值960 MHz频率范围的移动通信基站应用而设计。

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产品详情

特征

  • 生产测试在对称Doherty配置中进行
  • 增大负栅源电压范围，改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范
  • 采用盘卷包装。R3后缀 = 250个，32 mm卷带宽度，13英寸卷盘。

射频性能表

900 MHz

典型Doherty单载波W-CDMA性能：VDD = 48 Vdc，IDQA = 860 mA，VGSB = 0.9 Vdc，平均输出功率 = 100 W，输入信号PAR = 9.9 dB @ 0.01% CCDF。
频率 Gps
(dB)		 ηD
(%)		 输出PAR
(dB)		 ACPR
(dBc)
920 MHz19.548.57.2–29.2
940 MHz19.549.57.1–32.0
960 MHz19.248.07.0–35.7
N true 0 PSPAFV09P350-04Nzh 7 封装信息 Package Information t790 2 工程设计要点 Technical Notes t521 1 应用笔记 Application Note t789 3 数据手册 Data Sheet t520 1 zh 0 false zh zh 数据手册 Data Sheet 1 1 0 English The AFV09P350-04NR3 and AFV09P350-04GNR3 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 720 to 960 MHz. 1389661148507723886899 PSP 512.1 KB None None documents None 1389661148507723886899 /docs/en/data-sheet/AFV09P350-04N.pdf 512058 /docs/en/data-sheet/AFV09P350-04N.pdf AFV09P350-04N documents N N 2016-10-31 AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast<sup>®</sup> RF Power LDMOS Transistors – Data Sheet /docs/en/data-sheet/AFV09P350-04N.pdf /docs/en/data-sheet/AFV09P350-04N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jan 13, 2014 980000996212993340 Data Sheet Y N AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast<sup>®</sup> RF Power LDMOS Transistors – Data Sheet 应用笔记 Application Note 3 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 4 0 English This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. 1236894638615715664840 PSP 449.7 KB None None documents None 1236894638615715664840 /docs/en/application-note/AN3789.pdf 449688 /docs/en/application-note/AN3789.pdf AN3789 documents N N 2016-10-31 Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf /docs/en/application-note/AN3789.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Mar 12, 2009 645036621402383989 Application Note Y N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 工程设计要点 Technical Notes 1 5 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 2 6 E English 1385568194773698055909 PSP 76.8 KB None None documents None 1385568194773698055909 /docs/en/package-information/98ASA10834D.pdf 76788 /docs/en/package-information/98ASA10834D.pdf SOT1825-1 documents N N 2016-10-31 98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins /docs/en/package-information/98ASA10834D.pdf /docs/en/package-information/98ASA10834D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins 7 B English 98ASA10833D, OM-780-4L Straight Lead 1320204697071704615089 PSP 69.8 KB None None documents None 1320204697071704615089 /docs/en/package-information/98ASA10833D.pdf 69766 /docs/en/package-information/98ASA10833D.pdf SOT1818-4 documents N N 2016-10-31 98ASA10833D /docs/en/package-information/98ASA10833D.pdf /docs/en/package-information/98ASA10833D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASA10833D false 0 AFV09P350-04N downloads zh-Hans true 1 Y PSP 封装信息 2 /docs/en/package-information/98ASA10834D.pdf 2016-10-31 1385568194773698055909 PSP 6 Mar 22, 2016 Package Information None /docs/en/package-information/98ASA10834D.pdf English documents 76788 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10834D.pdf 98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins /docs/en/package-information/98ASA10834D.pdf documents 302435339416912908 Package Information N en None D pdf E N N 98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins 76.8 KB SOT1825-1 N 1385568194773698055909 /docs/en/package-information/98ASA10833D.pdf 2016-10-31 1320204697071704615089 PSP 7 Mar 22, 2016 Package Information 98ASA10833D, OM-780-4L Straight Lead None /docs/en/package-information/98ASA10833D.pdf English documents 69766 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10833D.pdf 98ASA10833D /docs/en/package-information/98ASA10833D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA10833D 69.8 KB SOT1818-4 N 1320204697071704615089 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 5 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 应用笔记 3 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN3789.pdf 2016-10-31 1236894638615715664840 PSP 4 Mar 12, 2009 Application Note This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. None /docs/en/application-note/AN3789.pdf English documents 449688 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN3789.pdf Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 449.7 KB AN3789 N 1236894638615715664840 数据手册 1 /docs/en/data-sheet/AFV09P350-04N.pdf 2016-10-31 1389661148507723886899 PSP 1 Jan 13, 2014 Data Sheet The AFV09P350-04NR3 and AFV09P350-04GNR3 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 720 to 960 MHz. None /docs/en/data-sheet/AFV09P350-04N.pdf English documents 512058 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFV09P350-04N.pdf AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast<sup>®</sup> RF Power LDMOS Transistors – Data Sheet /docs/en/data-sheet/AFV09P350-04N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast<sup>®</sup> RF Power LDMOS Transistors – Data Sheet 512.1 KB AFV09P350-04N N 1389661148507723886899 true Y Products

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