A2V07H525-04N_595-851 MHz, 120 W Avg, 48 V

产品详情

特征

Advanced high performance in-package Doherty
Greater negative gate-source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Tables

600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 700 mA, V_GSB = 0.5 Vdc, P_out = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
595 MHz	17.8	54.7	6.8	–27.5
623 MHz	17.5	56.9	7.2	–29.2
652 MHz	17.3	53.4	6.8	–27.2

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 700 mA, V_GSB = 1.25 Vdc, P_out = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
758 MHz	18.4	53.0	7.1	–31.1
780 MHz	18.3	54.1	7.1	–31.1
803 MHz	17.5	54.1	6.7	–30.6

购买/参数

部件展开描述	订购	计算机辅助设计模型	状态	Frequency (Min) (MHz)	Frequency (Max) (MHz)	Supply Voltage (Typ) (V)	Peak Power (Typ) (dBm)	Peak Power (Typ) (W)	模具技术
A2V07H525-04N 数据手册			使用寿命终止	595	851	48	57.8	602	LDMOS

文档

快速参考恩智浦文档类别.

4 文件

紧凑列表

98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins[SOT1816-1]

PDFFeb 15, 2016版本更新 C

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004版本更新 0

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009版本更新 3

A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V Data Sheet[A2V07H525-04N]

PDFJul 20, 2017版本更新 0

设计资源

设计文件

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2 设计文件

印刷电路板与电路图
A2V07H525-04N 780 MHz PCB DXF file

ZIP版本 1Jul 22, 201753.6 KBA2V07H525-04N-780-PCB

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印刷电路板与电路图
A2V07H525-04N 600 MHz PCB DXF file

ZIP版本 1Jul 22, 2017240.6 KBA2V07H525-04N-600-PCB

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购物车

595-851 MHz, 120 W Avg., 48 V Airfast® RF Power LDMOS Transistor

产品详情

特征

RF Performance Tables

600 MHz

780 MHz

购买/参数

文档

过滤方式

封装信息 (1)

98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins[SOT1816-1]

工程设计要点 (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

应用笔记 (1)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

数据手册 (1)

A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V Data Sheet[A2V07H525-04N]

过滤方式

封装信息 (1)

98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins[SOT1816-1]

工程设计要点 (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

应用笔记 (1)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

数据手册 (1)

A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V Data Sheet[A2V07H525-04N]

设计资源

设计文件

过滤方式

A2V07H525-04N 780 MHz PCB DXF file

A2V07H525-04N 600 MHz PCB DXF file

过滤方式

筛选条件

A2V07H525-04N 780 MHz PCB DXF file

A2V07H525-04N 600 MHz PCB DXF file

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595-851 MHz, 120 W Avg., 48 V Airfast^® RF Power LDMOS Transistor