SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE
- 建议不要在新设计中使用本页介绍的产品。
The BGS8M2 is, also known as the LTE3001M, a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGS8M2 requires one external matching inductor.
The BGS8M2 delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of these low noise devices ensures the required receive sensitivity independent of cellular transmit power level in FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, the BGS8M2 can be switched off to operate in bypass mode at a 1 µA current, to lower power consumption.
The BGS8M2 is optimized for 1805 MHz to 2200 MHz.
6-Pin Leadless Package
产品详情
特征
- Operating frequency from 1805 MHz to 2200 MHz
- Noise figure = 0.85 dB
- Gain 14.4 dB
- High input 1 dB compression point of -3.5 dBm
- Bypass switch insertion loss of 2.2 dB
- High in band IP3i of 3.5 dBm
- Supply voltage 1.5 V to 3.1 V
- Self-shielding package concept
- Integrated supply decoupling capacitor
- Optimized performance at a supply current of 5.8 mA
- Power-down mode current consumption < 1 µA
- Integrated temperature stabilized bias for easy design
- Require only one input matching inductor
- Input and output DC decoupled
- ESD protection on all pins (HBM > 2 kV)
- Integrated matching for the output
- Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
- 180 GHz transit frequency - SiGe:C technology
- Moisture sensitivity level 1
Target Applications
- LNA for LTE reception in smart phones
- Feature phones
- Tablet PCs
- RF front-end modules
部件编号包含： BGS8M2.
购买/参数
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文档
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