MMZ25332B_1500-2800 MHz, 26.5 dB Amplifier | NXP 半导体

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1500-2800 MHz, 26.5 dB, 33 dBm InGaP HBT

MMZ25332B 使用寿命终止
The MMZ25332BT1 is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W-CDMA, TD-SCDMA and LTE wireless broadband applications. It provides high linearity for LTE and W-CDMA air interfaces with an ACPR of -50 dBc at an output power of up to 22 dBm, covering frequencies from 1500-2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost-effective, surface mount QFN 3 x 3 package. The device offers state-of-the-art reliability, ruggedness, temperature stability and ESD performance.

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Features

  • Frequency: 1500-2800 MHz
  • P1dB: 33 dBm @ 2500 MHz
  • Power Gain: 26.5 dB @ 2500 MHz
  • OIP3: 48 dBm @ 2500 MHz
  • EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)
  • Active Bias Control (adjustable externally)
  • Power Down Control via VBIAS Pin
  • Class 3A HBM ESD Rating
  • Single 3 to 5 V Supply
  • Single-ended Power Detector
  • Cost-effective 12-pin, 3 mm QFN Surface Mount Plastic Package
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7-inch Reel.

RF Performance Table

W-CDMA, LTE Performance

Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA
Frequency Pout
(dBm)		 Gps
(dB)		 ACPR
(dBc)		 PAE
(%)		 Test Signal
2140 MHz2227.0–50.07.0W-CDMA
2620 MHz2126.0–50.05.0LTE 20 MHz

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MMZ25332B
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