920-960 MHz,35.5 W连续波,28 V GSM,GSM EDGE横向N信道射频功率MOSFET | NXP 半导体

920-960 MHz,35.5 W连续波,28 V GSM,GSM EDGE横向N信道射频功率MOSFET

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N true 0 PSPMRFE6S9046Nzh 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 0 English Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier applications. 1241727121450721336465 PSP 645.8 KB None None documents None 1241727121450721336465 /docs/en/data-sheet/MRFE6S9046N.pdf 645787 /docs/en/data-sheet/MRFE6S9046N.pdf MRFE6S9046N documents N N 2016-10-31 ARCHIVED - MRFE6S9046NR1, MRFE6S9046GNR1 920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRFE6S9046N.pdf /docs/en/data-sheet/MRFE6S9046N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 14, 2009 980000996212993340 Data Sheet Y N ARCHIVED - MRFE6S9046NR1, MRFE6S9046GNR1 920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs false 0 MRFE6S9046N downloads zh-Hans true 1 Y PSP 数据手册 1 /docs/en/data-sheet/MRFE6S9046N.pdf 2016-10-31 1241727121450721336465 PSP 1 May 14, 2009 Data Sheet Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier applications. None /docs/en/data-sheet/MRFE6S9046N.pdf English documents 645787 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRFE6S9046N.pdf ARCHIVED - MRFE6S9046NR1, MRFE6S9046GNR1 920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRFE6S9046N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - MRFE6S9046NR1, MRFE6S9046GNR1 920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 645.8 KB MRFE6S9046N N 1241727121450721336465 true Y Products

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