470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors
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The MMRF1018NR1 and MMRF1018NBR1 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz.
产品详情
RF Performance Tables
860 MHz Narrowband
Typical Performance (Narrowband Test Circuit): VDD = 50 Vdc, IDQ = 350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.| Signal Type | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
ACPR (dBc) |
| DVB-T (8k OFDM) | 18 Avg. | 860 | 22.0 | 28.5 | –62.0 |
470-860 MHz Broadband
Typical Performance (Broadband Reference Circuit): VDD = 50 Vdc, IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.| Signal Type | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
Output Signal PAR (dB) |
IMD Shoulder (dBc) |
| DVB-T (8k OFDM) | 18 Avg. | 470 | 21.6 | 26.8 | 8.6 | –31.8 |
| 650 | 22.9 | 28.0 | 8.7 | –34.4 | ||
| 860 | 21.9 | 28.3 | 7.9 | –29.2 |
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