860 MHz，300 W，32 V射频功率LDMOS | NXP 半导体

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860 MHz，300 W，32 V射频功率LDMOS

MRFE6P3300H
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MRFE6P3300HR3专为470至860 MHz频率范围的宽带商业和工业应用而设计。该器件具有高增益，宽带性能，适用于32 V模拟或数字电视发射器中的大信号共源放大器应用。
N true 0 PSPMRFE6P3300Hzh 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 2 English Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. 1178225042819714447806 PSP 456.5 KB None None documents None 1178225042819714447806 /docs/en/data-sheet/MRFE6P3300H.pdf 456486 /docs/en/data-sheet/MRFE6P3300H.pdf MRFE6P3300H documents N N 2016-10-31 ARCHIVED - MRFE6P3300HR3 860 MHz, 300 W, 32 V Lateral N-Channel Broadband RF Power MOSFET /docs/en/data-sheet/MRFE6P3300H.pdf /docs/en/data-sheet/MRFE6P3300H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Dec 30, 2009 980000996212993340 Data Sheet Y N ARCHIVED - MRFE6P3300HR3 860 MHz, 300 W, 32 V Lateral N-Channel Broadband RF Power MOSFET false 0 MRFE6P3300H downloads zh-Hans true 1 Y PSP 数据手册 1 /docs/en/data-sheet/MRFE6P3300H.pdf 2016-10-31 1178225042819714447806 PSP 1 Dec 30, 2009 Data Sheet Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. None /docs/en/data-sheet/MRFE6P3300H.pdf English documents 456486 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRFE6P3300H.pdf ARCHIVED - MRFE6P3300HR3 860 MHz, 300 W, 32 V Lateral N-Channel Broadband RF Power MOSFET /docs/en/data-sheet/MRFE6P3300H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N ARCHIVED - MRFE6P3300HR3 860 MHz, 300 W, 32 V Lateral N-Channel Broadband RF Power MOSFET 456.5 KB MRFE6P3300H N 1178225042819714447806 true Y Products

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