1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs
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RF Power transistors, MMRF1005HR5 and MMRF1005HSR5, are designed for CW and pulse applications operating at 1300 MHz. These devices are suitable for use in defense and commercial CW and pulse applications, such as DME/IFF systems.
产品详情
RF Performance Tables
Typical Pulse Performance
VDD = 50 Vdc, IDQ = 100 mA| Signal Type | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
IRL (dB) |
| Pulse (200 µsec, 10% Duty Cycle) |
250 Peak | 1300 | 22.7 | 57.0 | –18 |
- Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz at all Phase Angles, 250 W Pulse Peak Power, 10% Duty Cycle, 200 µsec
Typical CW Performance
VDD = 50 Vdc, IDQ = 10 mA, TC = 61°C| Signal Type | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
IRL (dB) |
| CW | 230 CW | 1300 | 20.0 | 53.0 | –25 |
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