Features
Battery Cell Controller, Advanced, 6 Channels, TPL, LQFP48.
Package
HLQFP48 LQFP64, plastic, low profile quad flat package; 64 terminals; 0.5 mm pitch; 10 mm x 10 mm x 1.4 mm body.
封装
XSON6: XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1.1 x 0.7 x 0.37 mm
购买选项
BGU8M1X
使用寿命终止
12NC: 934068533115
详细信息
订购
工作特点
| 参数 | 值 |
|---|---|
Supply Voltage (Max) (V) | 3.1 |
Number of pins | 6 |
Package Style | XSON |
@f [max] (MHz) | 1843 |
NF (dB) | 0.8 |
Pi(1dB) [typ] (dBm) @ 2.8V | -2 |
@f [min] (MHz) | 1843 |
NF (dB) | 0.8 |
Pi(1dB) [typ] (dBm) | -2 |
@f [max] (MHz) | 1843 |
Security Status | COMPANY PUBLIC |
Supply Current (TYP) (mA) | 5 |
Icc, gain (mA) (typ) | 5 |
Description | SiGe:C Low Noise Amplifier MMIC for LTE |
Ton (µs) | 3 |
Noise Figure (Typ) (dB) | 0.8 |
Input 3rd Order Intercept (dBm) | 4 |
Supply Voltage (Min) (V) | 1.5 |
Power Gain (dB) @ f (MHz) | 13.5 @ 1843 |
| 参数 | 值 |
|---|---|
Supply Current (Typ) (μA) | 5000 |
NF (dB) | 0.8 |
IP3i (dBm) | 4.0 |
NF @Gp= 5 dB (dB) | 0.8 |
Gain (Typ) (dB) @ f (MHz) | 13.5 @ 1843 |
NF [typ] (dB) | 0.8 |
ICC [typ] (mA) | 5 |
Gass (dB) | 13.5 |
Noise Figure (Typ) (dB) @ f (MHz) | 0.8 @ 1843 |
Gconv [typ] (dB) | 13.5 |
TON/OFF (Max) (ns) | 0 |
Gp (dB) | 13.5 |
Toff (µs) | 1 |
Gp (dB) | 13.5 |
NXP_Gp [typ] (dB) | 13.5 |
Supply Voltage (Min-Max) (V) | 1.5 to 3.1 |
@f | 1.843 |
Input 3rd Order Intercept (dBm) | 4 |
环境
| 部件/12NC | 无铅 | 欧盟 RoHS | 无卤素 | RHF指标 | REACH SVHC | 重量（mg） |
|---|---|---|---|---|---|---|
BGU8M1X(934068533115) | Yes | Yes Certificate Of Analysis (CoA) | Yes |  | REACH SVHC | 0.74047 |
质量
| 部件/12NC | 安全保障功能安全 | 湿度灵敏度等级(MSL) | 封装体峰值温度（PPT）（C°） | ||
|---|---|---|---|---|---|
| 铅焊接 | 无铅焊接 | 铅焊接 | 无铅焊接 | ||
BGU8M1X (934068533115) | No | 1 | 1 | 240 | 260 |
配送
更多信息 BGU8M1
The BGU8M1 is, also known as the LTE1001M, a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8M1 requires one external matching inductor.
The BGU8M1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels, it delivers 13 dB gain at a noise figure of 0.8 dB. During high-power levels, it temporarily increases its bias current to improve sensitivity.
The BGU8M1 is optimized for 1805 MHz to 2200 MHz.