AFV09P350-04GN 产品信息|NXP

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AFV09P350-04GN

正常供应

AFV09P350-04GN

正常供应

特点

Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V

  • 数据手册:
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封装

FM4: FM4, plastic, flange mount package; 4 terminals; 9.96 mm x 20.57 mm x 3.81 mm body

购买选项

工作特点

参数值
fi(RF) [max] (MHz)
960
Number of pins
4
Package Style
DFM
Amp Class
AB
Test Signal
WCDMA
Supply Voltage (Typ) (V)
48
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.45
P1dB (Typ) (dBm)
53
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
720, 960
Efficiency (Typ) (%)
48.5
Peak Power (Typ) (W)
500
Frequency Band (Hz)
720000000, 960000000
参数值
Description
Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V
fi(RF) [min] (MHz)
720
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
100 @ AVG
P1dB (Typ) (W)
200
Gain (Typ) (dB)
19.5
Power Gain (Typ) (dB) @ f (MHz)
19.5 @ 920
Frequency (Max) (MHz)
960
Frequency (Min) (MHz)
720
Frequency (Min-Max) (GHz)
0.72 to 0.96000004
frange [max] (MHz)
960
frange [min] (MHz)
720
Rth(j-a) (K/W)
0.45
Matching
input impedance matching
Modes of Operation
wideband code division multiple access
Peak Power (Typ) (dBm)
57

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量（mg）
AFV09P350-04GNR3(935318141528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
3064.9

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度（PPT）（C°）Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接无铅焊接
AFV09P350-04GNR3
(935318141528)
No
3
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
AFV09P350-04GNR3
(935318141528)
854129
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
AFV09P350-04GNR3
(935318141528)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
AFV09P350-04GNR3
(935318141528)
2017-12-202018-01-03201710023INew PQ Label Input for Non-MPQ Shipments

更多信息 AFV09P350-04N

The AFV09P350-04NR3 and AFV09P350-04GNR3 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 720 to 960 MHz.